Lin,Kung-Hsuan / Senior Research Scientist

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Contact Information

Education

Secretary

Lee, Fu Fang / 886-2-2789-8985

Research Interest

  • Laser Spectroscopy
  • Ultrafast Optics
  • Ultrafast Phnonics
  • Laser Microscopy

Experience

  • 2016.07 - Associate Research Scientist, Institute of Physics, Academia Sinica
  • 2016 - 2017 Adjunct Assistant Professor, Institute of Photonics Technologies, NTHU
  • 2011 - 2016 Assistant Research Scientist, Institute of Physics, Academia Sinica
  • 2010 - 2011 Postdoctoral Fellow, CCMS, NTU
  • 2009 - 2010 Engineer, ITRI
  • 2007 - 2009 Postdoctoral Fellow, Chemistry Department, MIT
  • 2006 - 2007 Postdoctoral Fellow, Physics Department, NTNU

Publication

Journal Papers

  • [1]     Y.-S. Duh, Y. Nagasaki, Y.-L. Tang, P.-H. Wu, H.-Y. Cheng, H.-X. Ding, H. Ikuto, J.-H. Yang, Y.-P. Lo, K.-P. Chen, K. Fujita, C.-W. Chang, K.-H. Lin*, J. Takahara*, and S.-W. Chu*, 2020, “Giant photothermal nonlinearity in single silicon nanostructure”, NATURE COMMUNICATIONS, 11, 4101. (SCIE) (IF: 12.353; SCIE ranking: 4.7%)

  • [2]     C.-F. Lin, C.-F. Su, K.-H. Lin, Y.-S. Hsieh, and Y.-C. Cheng*,, 2020, “Protein crosslinking and immobilization in 3D microfluidics thorough multiphoton absorption”, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 9(11), 115013. (SCIE) (IF: 1.808; SCIE ranking: 47.3%,55.4%)

  • [3]     C. R. P. Inbaraj, R. J. Mathew, R. K. Ulaganathan, R. Sankar, M. Kataria, H. Y. Lin, H.-Y. Cheng, K.-H. Lin, H.-I Lin, Y.-M. Liao, F. C. Chou, Y.-T. Chen, C.-H. Lee, and Y.-F. Chen*, 2020, “Modulating charge separation with h-BN mediation in vertical van der Waals heterostructures”, ACS APPLIED MATERIALS & INTERFACES, 12(23), 26213-26221. (SCIE) (IF: 8.097; SCIE ranking: 16.3%,9.1%)

  • [4]     M. Kataria, K. Yadav, A. Nain, H.-I Lin, H.-W. Hu, C. R. P. Inbaraj, T.-J. Chang, Y.-M. Liao, H.-Y. Cheng, K.-H. Lin, H.-T. Chang, F.-G. Tseng, W.-H. Wang, and Y.-F. Chen*, 2020, “Self-sufficient and highly efficient gold sandwich upconversion nanocomposite lasers for stretchable and bio-applications”, ACS APPLIED MATERIALS & INTERFACES, 12 (17), 19840-19854. (SCIE) (IF: 8.097; SCIE ranking: 16.3%,9.1%)

  • [5]     E.-X. Chen, H.-Y. Cheng, Z.-G. Chen, W.-L. Chen, M. Kataria, Y.-M. Chang, Y.-F. Chen, W.-B. Su, and K.-H. Lin*, 2020, “Enhancement of ultrafast Photoluminescence from deformed graphene studied by optical localization microscopy”, NEW JOURNAL OF PHYSICS, 22 (1), 013001. (SCIE) (IF: 3.579; SCIE ranking: 14.1%)

  • [6]     C. R. P. Inbaraj, V. K. Gudelli, R. J. Mathew, R. K. Ulaganathan, R. Sankar, H. Y. Lin, H.-I Lin, Y.-M. Liao, H.-Y. Cheng, K.-H. Lin, F. C. Chou, Y.-T. Chen, C.-H. Lee, G.-Y. Guo, and Y.-F. Chen*, 2019, “Sn-doping enhanced ultra-high mobility InSnSe phototransistor”, ACS APPLIED MATERIALS & INTERFACES, 11 (27), 24269-24278. (SCIE) (IF: 8.097; SCIE ranking: 14.3%)

  • [7]     A. Gupta, H.-Y. Cheng, K.-H. Lin, C. T. Wu, P. K. Roy, S. Ghosh, and S. Chattopadhyay*, 2019, “Gold coated Cicada wings: anti-reflective micro-environment for plasmonic enhancement of fluorescence from upconversion nanoparticles”, MATERIALS SCIENCE & ENGINEERING C-MATERIALS FOR BIOLOGICAL APPLICATIONS, 102, 569-577. (SCIE) (IF: 5.08; SCIE ranking: 15.4%)

  • [8]     M. K. Thakur, A. Gupta, M. Y. Fakhri, R. S. Chen, C. T. Wu, K.-H. Lin, and S. Chattopadhyay*, 2019, “Optically coupled engineered upconversion nanoparticles and graphene for high responsivity broadband photodetector”, NANOSCALE, 11 (19), 9716. (SCIE) (IF: 7.233; SCIE ranking: 12.3%)

  • [9]     Fan J. W., R. A. Mole, S. K. Karna, J.-W. Shi, J.-K. Sheu, and K.-H. Lin*, 2019, “Verification of complex acoustic mismatch model in sub-THz regime”, APPLIED PHYSICS LETTERS, 114 (15), 151106. (SCIE, EI) (IF: 3.411; SCIE ranking: 19.6%)

  • [10]     G. Haider, H.-I. Lin, K. Yadav, Y.-M. Liao, H.-W. Hu, K.-C. Shen, P. K. Roy, K.-H. Lin, Y.-T. Chen, F.-R. Chen, and Y.-F. Chen*, 2018, “A Highly-Efficient Single Segment White Random Laser”, ACS Nano, 12(12), 11847-11859. (SCIE) (IF: 13.942; SCIE ranking: 3.4%,3.3%,5.4%,4.6%)

  • [11]     K.-H. Lin*, H.-Y. Cheng, C.-Y. Yang, H.-W. Li, C.-W. Chang, and S.-W. Chu*, 2018, “Phonon dynamics of single nanoparticles studied using confocal pump-probe backscattering”, APPLIED PHYSICS LETTERS, 113, 171906. (SCIE) (IF: 3.411; SCIE ranking: 19.6%)

  • [12]     C.-Y. Yang and K.-H. Lin*, 2018, “Temperature-dependence of hypersound dynamics in SrRuO/SrTiO heterostructures”, Physical Review B, 98(6), 064308. (SCIE) (IF: 3.836; SCIE ranking: 26.9%)

  • [13]     H.-Y. Cheng, C.-Y. Yang, L.-C. Yang, K.-C. Peng, C.-T. Chia, S.-J. Liu, I-N. Lin and K.-H. Lin*, 2018, “Effective thermal and mechanical properties of polycrystalline diamond films”, JOURNAL OF APPLIED PHYSICS, 123 (16), 165105. (SCIE, EI) (IF: 2.068; SCIE ranking: 39.9%)

  • [14]     T.-R. Kuo, H.-J. Liao, Y.-T. Chen, C.-Y. Wei, C.-C. Chang, Y.-C. Chen, Y.-H. Chang, J.-C. Lin, Y.-C. Lee, C.-Y. Wen, S.-S. Li*, K.-H. Lin*, and D.-Y. Wang*, 2018, “Extended visible to near-infrared harvesting of earth-abundant FeS-TiO heterostructures for highly active photocatalytic hydrogen evolution”, GREEN CHEMISTRY, 20, 1640-1647. (SCIE) (IF: 9.125; SCIE ranking: 3.2%,9%)

  • [15]     Y.-T. Chen, C.-Y. Yang, P.-C. Chen, J.-K. Sheu, and K.-H. Lin*, 2017, “Carrier dynamics of Mn-induced states in GaN thin films”, SCIENTIFIC REPORTS, 7, 5788. (SCIE) (IF: 4.259; SCIE ranking: 15.6%)

  • [16]     Fan J. W., Y.-H. Yeh, J.-K. Sheu, and K.-H. Lin*, 2016, “THz acoustic spectroscopy by using double quantum wells and ultrafast optical spectroscopy”, Scientific Reports, 6, 28577. (SCIE) (IF: 4.259; SCIE ranking: 15.6%)

  • [17]     S.-K. Hung*, K.-H. Lin, C.-C. Chen, C.-H. Chou, and Y.-C. Lin, 2016, “Total-internal-reflection-based photomask for large-area photolithography”, OPTICS AND LASER TECHNOLOGY, 79. (SCIE) (IF: 2.109; SCIE ranking: 40.2%,39.2%)

  • [18]     K.-H. Lin*, K.-J. Wang, C.-C. Chang, Y.-C. Wen, B. Lv, C.-W. Chu, and M.-K. Wu*, 2016, “Ultrafast dynamics of quasiparticles and coherent acoustic phonons in slightly underdoped (BaK)FeAs”, Scientific Reports, 6, 25962. (SCIE) (IF: 4.259; SCIE ranking: 15.6%)

  • [19]     S.-W. Chu*, H.-Y. Wu, Y.-T. Huang, P.-T. Shen, H. Lee, R. Oketani, Y. Yonemaru, M. Yamanaka, S. Shoji, K.-H. Lin, C.-W. Chang, S. Kawata, and K. Fujita*, 2016, “Ultrasmall all-optical plasmonic switch and its application to superresolution imaging”, Scientific Reports, 6, 24293. (SCIE) (IF: 4.259; SCIE ranking: 15.6%)

  • [20]     B.-W. Huang, T.-K. Hsiao, K.-H. Lin, D.-W. Chiou, and C.-W. Chang*, 2015, “Length-dependent thermal transport and ballistic thermal conduction”, AIP Advances, 5, 053202. (SCIE) (IF: 1.653; SCIE ranking: 75%,61.4%,55.5%)

  • [21]     K.-H. Lin*, K.-J. Wang, C.-C. Chang, Y.-C. Wen, D.-H. Tsai, Y.-R. Wu, Y.-T. Hsieh, M.-J. Wang, B. Lv, P. C.-W. Chu, and M.-K. Wu*, 2014, “Observation of pseudogaplike feature above Tc in LiFeAs by ultrafast optical spectroscopy”, PHYSICAL REVIEW B, 90 (17), 174502. (SCIE) (IF: 3.813; SCIE ranking: 26.9%)

  • [22]     C.-Y. Yang, C.-T. Chia, H.-Y. Chen, S. Gwo, and K.-H. Lin*, 2014, “Ultrafast Carrier Dynamics in GaN nanorods”, APPLIED PHYSICS LETTERS, 105 (21), 212105. (SCIE) (IF: 3.495; SCIE ranking: 19.9%)

  • [23]     K.-H. Lin*, S.-W. Weng, P.-W. Lyu, T.-R. Tsai, and W.-B. Su*, 2014, “Observation of optical second harmonic generation from suspended single-layer and bi-layer graphene”, APPLIED PHYSICS LETTERS, 105 (15), 151605. (SCIE) (IF: 3.495; SCIE ranking: 19.9%)

  • [24]     C.-H. Lu*, K.-H. Lin, Y.-Y. Hsu, K.-T. Tsen, Y.-S. Kuan*, 2014, “Inhibition of Escherichia coli respiratory enzymes by short visible femtosecond laser irradiation”, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 47(31), 315402. (SCIE) (IF: 2.373; SCIE ranking: 37%)

  • [25]     K.-H. Lin*, S.-C. Liou, W.-L. Chen, C.-L.-Wu, G.-R. Lin, Y.-M. Chang, 2013, “Tunable and Stable UV-NIR Photoluminescence from Annealed SiOx with Si Nanoparticles”, OPTICS EXPRESS, 21(20), 23416-23424. (SCIE) (IF: 3.356; SCIE ranking: 20.2%)

  • [26]     K.-H. Lin*, D.-H. Tsai, K.-J. Wang, S.-H. Chen, K.-L. Chi, J.-W. Shi, P.-C. Chen, J.-K. Sheu, 2013, “Acoustic spectroscopy for studies of vitreous silica up to 740 GHz”, AIP Advances, 3, 072126. (SCIE) (IF: 1.653; SCIE ranking: 75%,61.4%,55.5%)

  • [27]     C.-L. Chen, L.-R. Kuo, S.-Y. Lee, Y.-K. Hwu, S.-W. Chou, C.-C. Chen, F.-H. Chang, K.-H. Lin, D.-H. Tsai, and Y.-Y. Chen*, 2013, “Photothermal cancer therapy via femtosecond-laser-excited FePt nanoparticles”, BIOMATERIALS, 34 (4), 1128-1134. (SCIE) (IF: 8.806; SCIE ranking: 1.3%,3%)

  • [28]     Y.-S. Lin, K.-H. Lin, T. Tite, C.-Y. Chuang, Y.-M. Chang*, J. A. Yeh*, 2012, “Investigation of Nanopatterned c-plane Sapphire Substrates for Growths of Polar and Nonpolar GaN epilayers”, JOURNAL OF CRYSTAL GROWTH, 348 (1), 47-52. (SCIE) (IF: 1.742; SCIE ranking: 65.4%,51.4%,58.6%)

  • [29]     A. A. Maznev*, K. J. Manke, K.-H. Lin, K. A. Nelson, C.-K. Sun, J.-I. Chyi, 2012, “Broadband terahertz ultrasonic transducer based on a laser-driven piezoelectric semiconductor superlattice”, ULTRASONICS, 52(1), 1-4. (SCIE) (IF: 2.377; SCIE ranking: 39.5%,29%)

  • [30]     K.-H. Lin, C.-Y. Chuang, Y.-Y. Lee, F.-C. Li, Y.-M. Chang*, I.-P. Liu, S.-C. Chou, Y.-L. Lee*, 2012, “Charge transfer in the heterointerfaces of CdS/CdSe co-sensitized TiO2 photoelectrode”, Journal of Physical Chemistry C, 116 (1), 1550-1555. (SCIE) (IF: 4.484; SCIE ranking: 35.9%,18.9%,25.9%)

  • [31]     Y.-S. Lin, K.-H. Lin, Y.-M. Chang*, J. A. Yeh*, 2012, “Epitaxy of m-plane GaN on nanoscale patterned c-plane sapphire substrates”, SURFACE SCIENCE, 606 (1-2), L1-L4. (SCIE) (IF: 1.997; SCIE ranking: 55.2%,59.2%)

  • [32]     Y.-C. Wen, G.-W. Chern, K.-H. Lin, J. J. Yeh, C.-K. Sun*, 2011, “Femtosecond Optical Excitation of Coherent Acoustic Phonons in a Piezoelectric p-n Junction”, PHYSICAL REVIEW B, 84 (20), 205315. (SCIE) (IF: 3.813; SCIE ranking: 26.9%)

  • [33]     C. A. Werley, Q. Wu, K.-H. Lin, R. Tait, A. Dorn, M. Bawendi, and K. A. Nelson*, 2010, “Comparison of phase-sensitive imaging techniques for studying terahertz waves in structured LiNbO3 ”, JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 27(11), 2350-2359. (SCIE) (IF: 2.048; SCIE ranking: 44.7%)

  • [34]     E. R. Statz, K.-H. Lin, K. A. Nelson, M. Yang and K. J. Webb*, 2010, “Demonstration of terahertz frequency-dependent field transformation in an irregular waveguide structure with direct measurement of the internal electric fields”, OPTICS LETTERS, 35(17), 2931-2933. (SCIE) (IF: 3.589; SCIE ranking: 14.9%)

  • [35]     Y.-C. Wen, C.-L. Hsieh, K.-H. Lin, H.-P. Chen, S.-C. Chin, C.-L. Hsiao, Y.-T. Lin, C.-S. Chang, Y.-C. Chang, L.-W. Tu, C.-K. Sun*, 2009, “Specular scattering probability of acoustic phonons in atomically flat interfaces”, PHYSICAL REVIEW LETTERS, 103(26), 264301. (SCIE) (IF: 8.839; SCIE ranking: 7.7%)

  • [36]     K.-H. Lin*, C. A. Werley, K. A. Nelson*, 2009, “Generation of multicycle terahertz phonon-polariton waves in a planar waveguide by tilted optical pulse fronts”, APPLIED PHYSICS LETTERS, 95(10), 103304. (SCIE) (IF: 3.495; SCIE ranking: 19.9%)

  • [37]     Q. Wu*, C. A. Werley, K.-H. Lin, A. Dorn, M. Bawendi, K. A. Nelson*, 2009, “Quantitative phase contrast imaging of THz electric fields in a dielectric waveguide”, OPTICS EXPRESS, 17(11), 9219-9225. (SCIE) (IF: 3.356; SCIE ranking: 20.2%)

  • [38]     S.-P. Tai, Y. Wu, D.-B. Shieh, L.-J. Chen, K.-J. Lin, C.-H. Yu, S.-W. Chu, C.-H. Chang, X.-Y. Shi, Y.-C. Wen, K.-H. Lin, T.-M. Liu, C.-K. Sun*, 2007, “Molecular imaging of cancer cells using plasmon-resonant-enhanced third-harmonic-generation in silver nanoparticles”, ADVANCED MATERIALS, 19(24), 4520. (SCIE) (IF: 21.95; SCIE ranking: 1.4%,4.5%,2.7%,2.8%,3.3%,2.9%)

  • [39]     K.-H. Lin, C.-M. Lai, C.-C. Pan, J.-I. Chyi, J.-W. Shi, S.-Z. Sun, C.-F. Chang, C.-K. Sun*, 2007, “Spatial manipulation of nanoacoustic waves with nanoscale spot sizes”, Nature Nanotechnology, 2(11), 704-708. (SCIE) (IF: 37.49; SCIE ranking: 2.2%,1.4%)

  • [40]     Y.-C. Wen, L.-C. Chou, H.-H. Lin, V. Gusev, K.-H. Lin, C.-K. Sun*, 2007, “Efficient generation of coherent acoustic phonons in (111) InGaAs/GaAs multiple quantum wells through piezoelectric effects”, APPLIED PHYSICS LETTERS, 90(17), 172102. (SCIE) (IF: 3.495; SCIE ranking: 19.9%)

  • [41]     Y.-C. Wen, L.-C. Chou, H.-H. Lin, K.-H. Lin, T.-F. Kao, C.-K. Sun*, 2006, “Compositional Dependence of Longitudinal Sound Velocities of Piezoelectric (111) InxGa(1-x)As Measured by Picosecond Ultrasonics”, JOURNAL OF APPLIED PHYSICS, 100(10), 103516. (SCIE) (IF: 2.176; SCIE ranking: 39.7%)

  • [42]     K.-H. Lin, C.-F. Chang, C.-C. Pan, J.-I. Chyi, S. Keller, U. Mishra, S. P. DenBaars, C.-K. Sun*, 2006, “Characterizing the Phononic Bandgap Nano-Crystal with a Piezoelectric Single Quantum Well”, APPLIED PHYSICS LETTERS, 89(14), 143103. (SCIE) (IF: 3.495; SCIE ranking: 19.9%)

  • [43]     K.-H. Lin, C.-T. Yu, S.-Z. Sun, H.-P. Chen, C.-C. Pan, J.-I. Chyi, S.-W. Huang, P.-C. Li, C.-K. Sun*, 2006, “Two-Dimensional Nano-Ultrasonic Imaging by using Acoustic Nanowaves”, APPLIED PHYSICS LETTERS, 89(4), 043106. (SCIE) (IF: 3.495; SCIE ranking: 19.9%)

  • [44]     T.-H. Tsai, C.-Y. Lin, H.-J. Tsai, S.-Y. Chen, S.-P. Tai, K.-H. Lin, C.-K. Sun*, 2006, “Biomolecular imaging based on far-red fluorescent protein with a high two-photon excitation action cross section”, OPTICS LETTERS, 31(7), 930. (SCIE) (IF: 3.589; SCIE ranking: 14.9%)

  • [45]     C.-T. Yu, K.-H. Lin, C.-L. Hsieh, C.-C. Pan, J.-I. Chyi, C.-K. Sun*, 2005, “Generation of Frequency Tunable Nano-Acoustic-Waves by Optical Coherent Control”, APPLIED PHYSICS LETTERS, 87(9), 093114. (SCIE) (IF: 3.495; SCIE ranking: 19.9%)

  • [46]     K.-H. Lin, G.-W. Chern, C.-T. Yu, T.-M. Liu, C.-C. Pan, G.-T. Chen, J.-I. Chyi, S.-W. Huang, P.-C. Li, C.-K. Sun*, 2005, “Optical Piezoelectric Transducer for Nano-Ultrasonics”, IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 52(8), 1404-1414. (SCIE) (IF: 2.704; SCIE ranking: 31.5%,19.4%)

  • [47]     C.-K. Sun*, S.-Z. Sun, K.-H. Lin, K. Y. Zhang, H.-L. Liu, S.-C. Liu, and J.-J. Wu, 2005, “Ultrafast Carrier Dynamics in ZnO Nanorods”, APPLIED PHYSICS LETTERS, 87(2), 023106. (SCIE) (IF: 3.495; SCIE ranking: 19.9%)

  • [48]     K.-H. Lin, C.-T. Yu, Y.-C. Wen, C.-K. Sun*, 2005, “Efficient generation of picosecond acoustic pulses using a p-n junction with piezoelectric effects”, APPLIED PHYSICS LETTERS, 86(9), 093110. (SCIE) (IF: 3.495; SCIE ranking: 19.9%)

  • [49]     C.-L. Hsieh, K.-H. Lin, S.-B. Wu, C.-C. Pan, J.-I. Chyi, C.-K. Sun*, 2004, “Reflection property of nano-acoustic wave at air-GaN interface”, APPLIED PHYSICS LETTERS, 85(20), 4735-4737. (SCIE) (IF: 3.495; SCIE ranking: 19.9%)

  • [50]     K.-H. Lin, G.-W. Chern, Y.-K. Huang, C.-K. Sun*, 2004, “Terahertz electron distribution modulation in piezoelectric InxGa1-xN/GaN multiple quantum wells using coherent acoustic nanowaves”, PHYSICAL REVIEW B, 70(7), 073307. (SCIE) (IF: 3.813; SCIE ranking: 26.9%)

  • [51]     G.-W. Chern, K.-H. Lin, C.-K. Sun*, 2004, “Transmission of light through quantum heterostructures modulated by coherent acoustic phonons”, JOURNAL OF APPLIED PHYSICS, 95(3), 1114-1121. (SCIE) (IF: 2.176; SCIE ranking: 39.7%)

  • [52]     C.-K. Sun*, G.-W. Chern, K.-H. Lin, Y.-K. Huang, 2003, “Observation of large acoustic gain in coherent acoustic phonon oscillators”, CHINESE JOURNAL OF PHYSICS, 41(6), 643-651. (SCIE) (IF: 1.051; SCIE ranking: 65.4%)

  • [53]     K.-H. Lin, G.-W. Chern, Y.-C. Huang, S. Keller, S. P. DenBaars, C.-K. Sun*, 2003, “Observation of huge nonlinear absorption enhancement near exciton resonance in GaN”, APPLIED PHYSICS LETTERS, 83(15), 3087-3089. (SCIE) (IF: 3.495; SCIE ranking: 19.9%)

  • [54]     G.-W. Chern, K.-H. Lin, Y.-K. Huang, C.-K. Sun*, 2003, “Spectral Analysis of High Harmonic Coherent Acoustic Phonons in Piezoelectric Semiconductor Multiple Quantum Wells”, PHYSICAL REVIEW B, 67(12), 121303(R). (SCIE) (IF: 3.813; SCIE ranking: 26.9%)

  • [55]     T.-M. Liu, Y.-C. Huang, G.-W. Chern, K.-H. Lin, C.-J. Lee, Y.-C. Hung, C.-K. Sun*, 2002, “Characterization of Ultrashort Optical Pulses with Third-Harmonic-Generation Based Triple Autocorrelation”, IEEE JOURNAL OF QUANTUM ELECTRONICS, 38(11), 1529-1535. (SCIE) (IF: 2.069; SCIE ranking: 46.2%,41.1%,43.6%)

  • [56]     K.-H. Lin, G.-W. Chern, S.-W. Chu, C.-K. Sun*, H. Xing, P. Kozodoy, S. Keller, U. Mishra, and S. P. DenBaars, 2002, “Ultrafast Hole Capture Dynamics in Mg-doped GaN Thin Films”, APPLIED PHYSICS LETTERS, 81(21), 3975-3977. (SCIE) (IF: 3.495; SCIE ranking: 19.9%)

  • [57]     T.-M. Liu, Y.-C. Huang, G.-W. Chern, K.-H. Lin, C.-J. Lee, Y.-C. Hung, C.-K. Sun*, 2002, “Triple Optical Autocorrelation for Direct Optical Pulse-Shape Measurement”, APPLIED PHYSICS LETTERS, 81(8), 1402-1404. (SCIE) (IF: 3.495; SCIE ranking: 19.9%)

  • [58]     Y.-C. Huang, G.-W. Chern, K.-H. Lin, J.-C. Liang, C.-K. Sun*, C.-C. Hsu, S. Keller, S. P. DenBaars, 2002, “Femtosecond Dynamics of Exciton Bleaching in Bulk GaN At Room Temperature”, APPLIED PHYSICS LETTERS, 81(1), 85-87. (SCIE) (IF: 3.495; SCIE ranking: 19.9%)

發現與突破

(1) 西元年:2020
研究人員(中):林宮玄
研究人員(英):KUNG-HSUAN, LIN
研究成果名稱(中):發現單顆奈米矽具有超大非線性光學散射
研究成果名稱(英):Observation of giant nonlinear light scattering from single silicon nanostructure
簡要記述(中):矽是半導體電子工業應用最廣泛的元素,因此矽光子學擁有與電子元件整合的優勢,其中光學控制是很重要的關鍵應用。臺大物理系朱士維教授、日本大阪大學光子學中心Junichi Takahara 教授與中研院物理所林宮玄博士等人,發現單顆奈米矽長方體,可藉由光致熱效應,產生超大的非線性光學散射,且反應時間僅須奈秒等級。這個發現展示實現超快奈米全光學開關元件的潛力,也具有做出精度高達40奈米的遠場光學超解析顯微影像的應用。詳細討論可參考 Nature Communications Vol. 11, 4101 (2020).
簡要記述(英):Silicon is the most widely applied element in semiconductor industry. Therefore, silicon photonics exhibits the advantage for integration with electronic devices. And optical control is an important key application. Prof. Shi-Wei Chu (Physics, National Taiwan University), Prof. Junichi Takahara (Photonics Center, Osaka University, Japan), and Dr. Kung-Hsuan Lin (Institute of Physics, Academia Sinica) et al. found giant nonlinear light scattering from single silicon nanoblock through photothermal effects and the response time was simply on the timescale of nanoseconds. This observation demonstrates the potential to realize all optical switch at nanometer scale, and the application to achieve far-field superresolution microscopy with resolution of 40 nm. Detailed discussions can be referred to Nature Communications Vol. 11, 4101 (2020).
主要相關著作:
Y.-S. Duh, Y. Nagasaki, Y.-L. Tang, P.-H. Wu, H.-Y. Cheng, H.-X. Ding, H. Ikuto, J.-H. Yang, Y.-P. Lo, K.-P. Chen, K. Fujita, C.-W. Chang, K.-H. Lin*, J. Takahara*, and S.-W. Chu*, 2020, “Giant photothermal nonlinearity in single silicon nanostructure”, NATURE COMMUNICATIONS, 11, 4101. (SCIE) (IF: 12.353; SCIE ranking: 4.7%)
(2) 西元年:2017
研究人員(中):林宮玄
研究人員(英):KUNG-HSUAN, LIN
研究成果名稱(中):實驗得到電子動態時間,可幫助太陽能電池效率最佳化
研究成果名稱(英):Experimentally obtained relaxation time of electrons can help to optimize the efficiency of solar cells
簡要記述(中):太陽能電池材料的能隙,決定什麼波長的光可轉換為電子進而變電流,而單能隙材料使其理論轉換效率最多也只能到 40% 左右。有學者提出中間能帶 (Intermediate band) 太陽能電池的想法,利用中間能帶,使小於能隙的部分光能量也可轉換成電子,理論可達63%轉換效率,其中電子停留在中間能帶的時間資訊很重要。中研院物理所林宮玄博士團隊與成大光電系許進恭教授團隊,量測摻錳之氮化鎵 (Mn-doped GaN)裡,電子停留在錳相關中間能帶的時間。此重要資訊,可幫助中間能帶太陽能電池建立模型的時間參數,提供效率最佳化方向。詳細討論發表在 Scientific Reports Vol. 7, 5788 (2017).
簡要記述(英):The bandgap of the material for a solar cell determines what wavelength of light can be converted to moving electrons (or currents). However, the conversion efficiency of single-material-based solar cell is at most 40% according to theoretical calculation. Researchers proposed that intermediate bands could increase the conversion efficiency up to 63% theoretically. The relaxation time of electrons in the intermediate bands is thus important for this design. Kung-Hsuan Lin's group in Institute of Physics, Academia Sinica and Prof. Jinn-Kong Sheu's group in Department of Photonics, National Cheng Kung University experimentally measured the relaxation time of electrons in the intermediate band of Mn-doped GaN. This important information can provide the time parameter of the theoretical model, which is helpful for optimization of the efficiency of solar cells. Detailed discussion can be found in Scientific Reports Vol. 7, 5788 (2017).
主要相關著作:
Y.-T. Chen, C.-Y. Yang, P.-C. Chen, J.-K. Sheu, and K.-H. Lin*, 2017, “Carrier dynamics of Mn-induced states in GaN thin films”, SCIENTIFIC REPORTS, 7, 5788. (SCIE) (IF: 4.259; SCIE ranking: 15.6%)
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