李偉立 / 研究員

研究興趣

• 新穎量子物質之傳輸特性
• 強關聯電子系統
• 石墨烯及二維度晶體元件
• 拓撲物質系統量子傳輸特性
• 複雜氧化物及其介面現象

獎項及殊榮

經歷

• 美國約翰霍普金斯大學 博士後研究

學術著作

期刊論文

• [1]     Uddipta Kar, Akhilesh Kr. Singh, Yu-Te Hsu, Chih-Yu Lin, Bipul Das, Cheng-Tung Cheng, M. Berben, Song Yang, Chun-Yen Lin, Chia-Hung Hsu, S. Wiedmann, Wei-Cheng Lee, and Wei-Li Lee*, 2023, “The thickness dependence of quantum oscillations in ferromagnetic Weyl metal SrRuO_3”, NPJ QUANTUM MATERIALS, 8, 8. (SCIE) (IF: 7.032; SCI ranking: 22.6%,18.1%,21.7%,17.6%)
  
  
• [2]     Jan Wyzula, Xin Lu, David Santos-Cottin, Dibya Kanti Mukherjee, Ivan Mohelský, Florian Le Mardelé, Jiˇrí Novák, Mario Novak, Raman Sankar, Yuriy Krupko, Benjamin A. Piot, Wei-Li Lee, Ana Akrap, Marek Potemski, Mark O. Goerbig, and Milan Orlita*, 2022, “Lorentz-Boost-Driven Magneto-Optics in a Dirac Nodal-Line Semimetal”, ADVANCED SCIENCE, 9, 2105720. (SCIE) (IF: 16.806; SCI ranking: 7.3%,5.4%,8.4%)
  
  
• [3]     Elisha Cho-Hao Lu, Cheng-Tung Cheng , Liang Li, Wei-Li Lee*, 2021, “Full electric-field tuning of the nonreciprocal transport effect in massive chiral fermions with trigonal warping”, Physical Review Research, 3(3), 033160.
  
  
• [4]     Uddipta Kar, Akhilesh Kr. Singh, Song Yang, Chun‑Yen Lin, Bipul Das, Chia‑Hung Hsu*, Wei‑Li Lee*, 2021, “High‑sensitivity of initial SrO growth on the residual resistivity in epitaxial thin films of SrRuO3 on SrTiO3 (001)”, SCIENTIFIC REPORTS, 11, 16070. (SCIE) (IF: 4.38; SCI ranking: 23.3%)
  
  
• [5]     Heng-Wei Kuo, Kuo-Long Pan*, Wei-Li Lee, 2021, “A propellant-free superconducting solenoid thruster driven by geomagnetic field”, JOURNAL OF ADVANCED RESEARCH, 28, 269-275. (SCIE) (IF: 10.479; SCI ranking: 12.3%)
  
  
• [6]     Akhilesh Kr. Singh, Uddipta Kar, Matthew D. Redell, Tsung-Chi Wu, Wei-Hsiang Peng, Bipul Das, Satish Kumar, Wei-Cheng Lee*, and Wei-Li Lee*, 2020, “Field-induced resistance peak in a superconducting niobium thin film proximity coupled to a surface reconstructed SrTiO3”, npj Quantum Materials, 5, 45. (SCIE) (IF: 7.032; SCI ranking: 22.6%,18.1%,21.7%,17.6%)
  
  
• [7]     Akhilesh Kr. Singh, Tsung-Chi Wu, Ming-Yuan Song, Ming-Chin Chen, Chi-Sheng Li, S.-K. Yip, and Wei-Li Lee*, 2020, “Determination of spin-orbit scattering lifetime at the interface of LaAlO3/SrTiO3 from the superconducting upper critical fields”, Physical Review Research, 2, 013311.
  
  
• [8]     Raman Sankar,* I. Panneer Muthuselvam, K. Ramesh Babu, G. Senthil Murugan, Karthik Rajagopal, Rakesh Kumar, Tsung-Chi Wu, Cheng-Yen Wen, Wei-Li Lee, Guang-Yu Guo, and Fang-Cheng Chou*, 2019, “Crystal Growth and Magnetic Properties of Topological Nodal-Line Semimetal GdSbTe with Antiferromagnetic Spin Ordering”, INORGANIC CHEMISTRY, 58, 11730. (SCIE) (IF: 5.165; SCI ranking: 11.1%)
  
  
• [9]     C.-P. Su, A. Kr. Singh, T.-C. Wu, M.-C. Chen, Y.-C. Lai, W.L. Lee, G. Y. Guo, and M.-W. Chu*, 2019, “Impact of strain-field interference on the coexistence of electron and hole gases in SrTiO3/LaAlO3/SrTiO3”, PHYSICAL REVIEW MATERIALS, 3, 075003. (SCIE) (IF: 3.989; SCI ranking: 39.9%)
  
  
• [10]     I. Crassee, R. Sankar, Wei-Li Lee, A. Akrap, and M. Orlita*, 2018, “3D Dirac semimetal Cd3As2: A review of material properties”, Physical Review Materials, 2,120302. (SCIE) (IF: 3.989; SCI ranking: 39.9%)
  
  
• [11]     Akhilesh Kr. Singh*, Tsung-Chi Wu, Ming-Chin Chen, Ming-Yuan Song, Chia-Ping Su, M.-W Chu, and Wei-Li Lee*, 2018, “Influence of SrTiO3 capping layer on the charge transport at the interfaces of SrTiO3/LaAlO3/SrTiO3 (100) heterostructure”, Physical Review Materials, 2,114009. (SCIE) (IF: 3.989; SCI ranking: 39.9%)
  
  
• [12]     Chih-Chuan Su, Chi-Sheng Li, Tzu-Cheng Wang, Syu-You Guan, Raman Sankar, Fangcheng Chou, Chia-Seng Chang, Wei-Li Lee*, Guang-Yu Guo*, and Tien-Ming Chuang*, 2018, “Surface termination dependent quasiparticle scattering interference and magneto-transport study on ZrSiS”, NEW JOURNAL OF PHYSICS, 20,103025. (SCIE) (IF: 3.732; SCI ranking: 25.6%)
  
  
• [13]     G. Peramaiyan, Raman Sankar*, I. Panneer Muthuselvam, and Wei-Li Lee, 2018, “Anisotropic magnetotransport and extremely large magnetoresistance in NbAs2 single crystals”, SCIENTIFIC REPORTS, 8,6414. (SCIE) (IF: 4.38; SCI ranking: 23.3%)
  
  
• [14]     M. Hakl,* S. Tchoumakov, I. Crassee, A. Akrap, B. A. Piot, C. Faugeras, G. Martinez, A. Nateprov, E. Arushanov, F. Teppe, R. Sankar, Wei-Li Lee, J. Debray, O. Caha, J. Novák, M. O. Goerbig, M. Potemski, and M. Orlita*, 2018, “Energy scale of Dirac electrons in Cd3As2”, PHYSICAL REVIEW B, 97, 115206. (SCIE) (IF: 4.036; SCI ranking: 38.7%,25.6%,31.9%)
  
  
• [15]     Ting-Hui Chen, Hsiang-Hsi Kung, Chang-Ran Wang, Chia-Tso Hsieh, and Wei-Li Lee*, 2017, “Evidence for enhanced phase fluctuations in nanostructured niobium thin films”, PHYSICAL REVIEW B, Rapid Communications 96, 020506(R). (SCIE) (IF: 4.036; SCI ranking: 38.7%,25.6%,31.9%)
  
  
• [16]     Wei-Hao Hsu, Wei-Tse Chang, Chun-Yueh Lin, Mu-Tung Chang, Chia-Tso Hsieh, Chang-Ran Wang, Wei-Li Lee, Ing-Shouh Hwang*, 2017, “Low-energy electron point projection microscopy/diffraction study of suspended graphene”, APPLIED SURFACE SCIENCE, 423, 266-274. (SCIE) (IF: 6.707; SCI ranking: 22.8%,4.8%,18.8%,23.2%)
  
  
• [17]     M.S. Tsai, C.S. Li, S.T. Guo, M.Y. Song, A. K. Singh*, M.-W. Chu and W.L. Lee*, 2017, “Off-stoichiometry driven carrier density variation at the interface of LaAlO3/SrTiO3”, SCIENTIFIC REPORTS, 7,1770. (SCIE) (IF: 4.38; SCI ranking: 23.3%)
  
  
• [18]     V. Lee, C.H. Wu, Z.X. Lou, W.L. Lee, and C.W. Chang*, 2017, “Divergent and ultrahigh thermal conductivity in millimeter-long nanotubes”, PHYSICAL REVIEW LETTERS, 118, 135901 (Editors' suggestion). (SCIE) (IF: 9.161; SCI ranking: 8.1%)
  
  
• [19]     R. Sankar, G.N. Rao, I.P. Muthuselvam, T.R. Chang, H.T. Jeng, G.S. Murugan, W.L. Lee, and F.C. Chou, 2017, “Anisotropic superconducting property studies of single crystal PbTaSe2”, JOURNAL OF PHYSICS-CONDENSED MATTER, 29, 095601. (SCIE) (IF: 2.333; SCI ranking: 59.4%)
  
  
• [20]     R. Sankar, G.N. Rao, I.P. Muthuselvam, C. Butler, N. Kumar, G.S. Murugan, C. Shekhar, T.R. Chang, C.Y. Wen, C.W. Chen, W.L. Lee, M.-T. Lin, H.T. Jeng, C. Felser, and F.C. Chou, 2016, “Polymorphic layered MoTe2 from semiconductor, topological insulator, to Weyl semimetal”, CHEMISTRY OF MATERIALS, 29, 699-707. (SCIE) (IF: 9.811; SCI ranking: 14.8%,12.2%)
  
  
• [21]     Pin-Yi Li, Yang Tsao, Yun-Ju Liu, Zong-Xing Lou, Wei-Li Lee, Shi-Wei Chu, and Chih-Wei Chang, 2016, “Unusual imaging properties of superresolution microspheres”, OPTICS EXPRESS, 24, 16479. (SCIE) (IF: 3.894; SCI ranking: 20.2%)
  
  
• [22]     Shih-Ting Guo, R. Sankar, Yung-Yu Chien, Tay-Rong Chang, Horng-Tay Jeng, Guang-Yu Guo, F. C. Chou, and Wei-Li Lee*, 2016, “Large transverse Hall-like signal in topological Dirac semimetal Cd3As2”, Scientific reports, 6, 27487. (SCIE) (IF: 4.38; SCI ranking: 23.3%)
  
  
• [23]     Yung-Yu Chien, Hongtao Yuan, Chang-Ran Wang, and Wei-Li Lee*, 2016, “Thermoelectric Power in Bilayer Graphene Device with Ionic Liquid Gating”, Scientific reports, 6, 20402. (SCIE) (IF: 4.38; SCI ranking: 23.3%)
  
  
• [24]     Wei-Li Lee，2016，〈拓撲材料新世界〉，《物理雙月刊》，第38卷第一期，頁63-68。
  
  
• [25]     X. Kou, L. Pan, J. Wang, Y. Fan, E.S. Choi, W.L. Lee, T. Nie, K. Murata, Q. Shao, S.C. Zhang, and K.L. Wang*, 2015, “Metal-to-insulator switching in quantum anomalous Hall states”, Nature Communications, 6, 8474. (SCIE) (IF: 14.919; SCI ranking: 5.5%)
  
  
• [26]     R. Sankar, M. Neupane, S.-Y. Xu, C.J. Butler, I. Zeljkovic, I.P. Muthuselvam, F.-T. Huang, S.-T. Guo, S.K. Karna, M.-W. Chu, W.L. Lee, M.-T. Lin, R. Jayavel, V. Madhavan, M.Z. Hasan, and F.C. Chou*, 2015, “Large single crystal growth, transport property, and spectroscopic characterizations of three-dimensional Dirac semimetal Cd3As2”, Scientific reports, 5, 12966. (SCIE) (IF: 4.38; SCI ranking: 23.3%)
  
  
• [27]     I.P. Muthuselvam, R. Sankar, V.N. Singh, G.N. Rao, W.L. Lee, G.Y. Guo* and F.C. Chou*, 2015, “Magnetic Orderings in Li2Cu(WO4)2 with Tungstate-Bridged Quasi-1D Spin-1/2 Chains”, INORGANIC CHEMISTRY, 54, 4303. (SCIE) (IF: 5.165; SCI ranking: 11.1%)
  
  
• [28]     Xufeng Kou, Shih-Ting Guo, Yabin Fan, Lei Pan, Murong Lang, Ying Jiang, Qiming Shao, Tianxiao Nie, Koichi Murata, Jianshi Tang, Yong Wang, Liang He, Ting-Kuo Lee, Wei-Li Lee*, and Kang L. Wang* , 2014, “Scale-Invariant Quantum Anomalous Hall Effect in Magnetic Topological Insulators beyond the Two-Dimensional Limit”, PHYSICAL REVIEW LETTERS, 113, 137201. (SCIE) (IF: 9.161; SCI ranking: 8.1%)
  
  
• [29]     R. Sankar, I. Panneer Muthuselvam, Christopher John Butler, S.-C. Liou, B. H Chen, M.-W. Chu, W. L. Lee, Minn-Tsong Lin, R.Jayavel, and F. C. Chou*, 2014, “Room temperature agglomeration for the growth of BiTeI single crystal with giant Rashba effect”, CRYSTENGCOMM, 16, 8678. (SCIE) (IF: 3.545; SCI ranking: 42.5%,23.1%)
  
  
• [30]     P.Y. Chen, H.H. Hsiao, C.I. Ho, C.C. Ho, W.L. Lee*, H.H. Chang, S.C. Lee, J.Z. Chen, and I-C. Cheng*, 2014, “ Periodic anti-ring back reflectors for hydrogenated amorphous silicon thin-film solar cells ”, OPTICS EXPRESS, 22, A1128-A1136. (SCIE) (IF: 3.894; SCI ranking: 20.2%)
  
  
• [31]     J.W. Chen*, G. Narsinga Rao, H.M. Lee, W.L. Lee, and F.C. Chou , 2014, “Dielectric properties of the spin-1/2 dimer compounds Ba3Cr2O8 and Sr3Cr2O8 ”, MATERIALS CHEMISTRY AND PHYSICS, 145, 461-464. (SCIE) (IF: 4.094; SCI ranking: 37.5%)
  
  
• [32]     Wei-Hsiang Lin, Ting-Hui Chen, Jan-Kai Chang, Jieh-I Taur, Yuan-Yen Lo, Wei-Li Lee, Chia-Seng Chang, Wei-Bin Su, and Chih-I Wu* , 2014, “A Direct and Polymer-Free Method for Transferring Graphene Grown by Chemical Vapor Deposition to Any Substrate”, ACS Nano, 8, 1784-1791. (SCIE) (IF: 15.881; SCI ranking: 7.8%,7.4%,6.3%,10.3%)
  
  
• [33]     H. C. Hsu, W. L. Lee, J. Y. Lin, B. L. Young, H. H. Kung, J. Huang, and F. C. Chou* , 2014, “Spin-Glass Transition and Giant Paramagnetism in Heavily Hole-Doped Bi2Sr2Co2Oy”, Journal of the Physical Society of Japan, 83, 024709. (SCIE) (IF: 1.828; SCI ranking: 58.1%)
  
  
• [34]     C.R. Wang, J.C. Tung, R. Sankar, C.T. Hsieh, Y.Y. Chien, G.Y. Guo*, F. C. Chou, and W.L. Lee*, 2013, “Magneto-transport in copper-doped noncentrosymmetric BiTeI”, PHYSICAL REVIEW B, Rapid Communications 88, 081104(R). (SCIE) (IF: 4.036; SCI ranking: 38.7%,25.6%,31.9%)
  
  
• [35]     F.-T. Huang, M.-W. Chu, H. H. Kung, W. L. Lee, R. Sankar, S.-C. Liou, K. K. Wu, Y. K. Kuo, and F. C. Chou*, 2012, “Nonstoichiometric doping and Bi antisite defect in single crystal Bi2Se3”, PHYSICAL REVIEW B, 86, 081104(R), Rapid Communications (Editors' Suggestions). (SCIE) (IF: 4.036; SCI ranking: 38.7%,25.6%,31.9%)
  
  
• [36]     H. C. Hsu, W. L. Lee, K. K. Wu, Y. K. Kuo, B. H. Chen, and F. C. Chou*, 2012, “Enhanced thermoelectric figure-of-merit ZT for hole-doped Bi2Sr2Co2Oy”, JOURNAL OF APPLIED PHYSICS, 111, 103709. (SCIE) (IF: 2.546; SCI ranking: 49.4%)
  
  
• [37]     T. Y. Ou-Yang, F.-T. Huang, G. J. Shu, W. L. Lee, M.-W. Chu, H. L. Liu, and F. C. Chou*, 2012, “Electronic phase diagram of LixCoO2 revisited with potentiostatically deintercalated single crystals”, PHYSICAL REVIEW B, 85, 035120. (SCIE) (IF: 4.036; SCI ranking: 38.7%,25.6%,31.9%)
  
  
• [38]     H-A Chin, I-C Cheng*, C-K Li, Y-R Wu, J Z Chen, W-S Lu and W-L Lee, 2011, “Electrical properties of modulation-doped rf-sputtered polycrystalline MgZnO/ZnO heterostructures ”, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 44, 455101. (SCIE) (IF: 3.207; SCI ranking: 36.3%)
  
  
• [39]     Chang-Ran Wang, Wen-Sen Lu, Lei Hao, Wei-Li Lee*, Ting-Kuo Lee, Feng Lin, I-Chun Cheng, and Jian-Zhang Chen, 2011, “Enhanced Thermoelectric Power in Dual-Gated Bilayer Graphene”, PHYSICAL REVIEW LETTERS, 107, 186602. (SCIE) (IF: 9.161; SCI ranking: 8.1%)
  
  
• [40]     Kun-Yang Wu, Yu-Tai Tao*, Chi-Chih Ho, Wei-Li Lee*, and Tsong-Pyng Perng, 2011, “High-performance space-charge-limited transistors with well-ordered nanoporous aluminum base electrode”, APPLIED PHYSICS LETTERS, 99, 093306. (SCIE) (IF: 3.791; SCI ranking: 29.4%)
  
  
• [41]     李偉立, 2011, “碳奈米結構的美”, 科學發展, 462, 54.
  
  
• [42]     C. C. Lee, W. L. Lee, J. -Y. Lin, C. C. Tsuei, J. G. Lin, and F. C. Chou* , 2011, “Superconducting to spin-glass state transformation in β-pyrochlore KxOs2O6”, PHYSICAL REVIEW B, 83, 104503. (SCIE) (IF: 4.036; SCI ranking: 38.7%,25.6%,31.9%)
  
  
• [43]     Chi-Chih Ho, Po-Yuan Chen, Keng-hui Lin, Wen-Tau Juan* and Wei-Li Lee*, 2011, “Fabrication of Monolayer of Polymer/Nanospheres Hybrid at a Water-Air Interface”, ACS Applied Materials & Interfaces, 3, 204. (SCIE) (IF: 9.229; SCI ranking: 13.1%,19.6%)
  
  
• [44]     李偉立，2010，〈挑戰不可能的任務─製備石墨超級薄片〉，《科學月刊》，492,902-909。
  
  
• [45]     H. C. Hsu, J.-Y. Lin, W. L. Lee, M.-W. Chu, T. Imai, Y. J. Kao, C. D. Hu, H. L. Liu, and F. C. Chou*, 2010, “Nonmagnetic impurity perturbation to the quasi-two-dimensional quantum helimagnet LiCu2O2”, PHYSICAL REVIEW B, 82, 094450. (SCIE) (IF: 4.036; SCI ranking: 38.7%,25.6%,31.9%)
  
  
• [46]     C.R. Wang, W.S. Lu and W.L. Lee*, 2010, “Transverse Thermoelectric Conductivity of Bilayer Graphene in Quantum Hall Regime”, PHYSICAL REVIEW B, Rapid Communications 82, 121406(R). (SCIE) (IF: 4.036; SCI ranking: 38.7%,25.6%,31.9%)
  
  
• [47]     Huai-An Chin, I-Chun Cheng*, Chih-I Huang, Yuh-Renn Wu, Wen-Sen Lu, Wei-Li Lee, Jian Z. Chen*, Kuo-Chuang Chiu, and Tzer-Shen Lin , 2010, “Two dimensional electron gases in polycrystalline MgZnO/ZnO heterostructures grown by rf-sputtering process”, JOURNAL OF APPLIED PHYSICS, 108, 054503. (SCIE) (IF: 2.546; SCI ranking: 49.4%)
  
  
• [48]     G. J. Shu, W. L. Lee, F.-T. Huang, M.-W. Chu, Patrick A. Lee, and F. C. Chou, 2010, “Oxygen nonstoichiometry and the origin of Na ion ordering in P2-NaxCoO2 ”, PHYSICAL REVIEW B, 82, 054106. (SCIE) (IF: 4.036; SCI ranking: 38.7%,25.6%,31.9%)
  
  
• [49]      H.C. Hsu, W.L. Lee, J.Y. Lin, H.L. Liu, and F.C. Chou*, 2010, “Disrupted long-range spin-spiral ordering and electric polarization in the Zn-substituted quantum helimagnet LiCu_(2-x)Zn_xO_2”, PHYSICAL REVIEW B, 81, 212407. (SCIE) (IF: 4.036; SCI ranking: 38.7%,25.6%,31.9%)
  
  
• [50]     Chi-Chih Ho, Tung-Wu Hsieh, Hsiang-Hsi Kung, Wen-Tau Juan, Keng-Hui Lin, and Wei-Li Lee*, 2010, “Reduced saturation magnetization in cobalt antidot thin films prepared by polyethylene oxide-assisted self-assembly of polystyrene nanospheres”, Applied Physics Letters, 96, 122504. (SCIE) (IF: 3.791; SCI ranking: 29.4%)
  
  
• [51]     李偉立，2009，〈異常霍爾效應的新發展〉，《台灣技術協會會訊五十期》，50, 1-8。
  
  
• [52]     F.-T. Huang, G. J. Shu, M.-W. Chu, Y. K. Kuo, W. L. Lee, H. S. Sheu, and F. C. Chou*, 2009, “Sodium ion ordering of Na0.77CoO2 under competing multivacancy cluster, superlattice, and domain formation”, Physical Review B, 80, 144113. (SCIE) (IF: 4.036; SCI ranking: 38.7%,25.6%,31.9%)
  
  
• [53]     J.W.G. Bos , M. Lee, E. Morosan, H.W. Zandbergen, Wei- Li Lee, N.P. Ong, R.J. Cava*, 2006, “Ferromagnetism below 10 K in Mn-doped BiTe”, Physical Review B, 74, 184429. (SCIE) (IF: 4.036; SCI ranking: 38.7%,25.6%,31.9%)
  
  
• [54]     Wei- Li Lee*, Frank Q. Zhu, and C. L. Chien, 2006, “Determination of domain walls resistance in a cobalt thin film by thickness modulation”, Applied Physics Letters, 88, 122503. (SCIE) (IF: 3.791; SCI ranking: 29.4%)
  
  
• [55]     M. L. Foo*, Q. Huang, J. W. Lynn, Wei- Li Lee, Tomasz Klimczuka, I. S. Hagemanna, N. P. Ong and R. J. Cava, 2006, “Synthesis, structure and physical properties of Ru ferrites: BaMRu5O11 (M=Li and Cu) and BaM'2Ru4O11 (M’=Mn, Fe and Co)”, Journal of Solid State Chemistry, 179, 563. (SCIE) (IF: 3.498; SCI ranking: 26.7%,49.4%)
  
  
• [56]     V. L. Miller*, Wei- Li Lee, G. Lawes, N. P. Ong, R. J. Cava, 2005, “Synthesis and properties of the Co7Se8-xSx and Ni7Se8-xSx solid solutions”, Journal of Solid State Chemistry, 178, 1508. (SCIE) (IF: 3.498; SCI ranking: 26.7%,49.4%)
  
  
• [57]     J.I. Lai*, KVPM Shafi , A. Ulman, K. Loos, Y.J. Lee, T. Vogt, Wei- Li Lee, NP Ong, 2005, “Controlling the size of magnetic nanoparticles using pluronic block copolymer surfactants”, Journal of Physical Chemistry B, 109, 15. (SCIE) (IF: 2.991; SCI ranking: 57.4%)
  
  
• [58]     Wei- Li Lee, Satoshi Watauchi, V. L. Miller, R. J. Cava, and N. P. Ong*, 2004, “Anomalous-Hall heat current and Nernst effect in the ferromagnetic CuCr2Se4-xBrx”, Physical Review Letters, 93, 226601. (SCIE) (IF: 9.161; SCI ranking: 8.1%)
  
  
• [59]     M. L. Foo*, Wei- Li Lee, T Siegrist, G Lawes, A. P. Ramirez, N. P. Ong, and R. J. Cava, 2004, “Electronic characterization of alkali ruthenium hollandites: KRu4O8, RbRu4O8 and Cs0.8Li0.2Ru4O8”, Materials Research Bulletin, 39, 1663. (SCIE) (IF: 4.641; SCI ranking: 32.4%)
  
  
• [60]     T. Klimczuk*, Wei- Li Lee, H. W. Zandbergen, and R. J. Cava, 2004, “Synthesis and magnetic properties of (Ba; Bi)1.54Rh8O16 hollandite”, Materials Research Bulletin, 39, 1671. (SCIE) (IF: 4.641; SCI ranking: 32.4%)
  
  
• [61]     R. E. Schaak*, M. Avdeev, Wei- Li Lee, G. Lawes, H. W. Zandbergen, J. D. Jorgensen, N. P. Ong, A. P. Ramirez, and R. J. Cava, 2004, “Formation of transition metal boride and carbide perovskites related to superconducting MgCNi3”, Journal of Solid State Chemistry, 177, 1244. (SCIE) (IF: 3.498; SCI ranking: 26.7%,49.4%)
  
  
• [62]     Wei- Li Lee, Satoshi Watauchi, V. L. Miller, R. J. Cava, and N. P. Ong*, 2004, “Dissipationless anomalous Hall current in the ferromagnetic spinel CuCr2Se4-xBrx”, Science, 303, 1647. (SCIE) (IF: 47.728; SCI ranking: 2.7%)
  
  
• [63]     Wei- Li Lee, M. K. Hass, G. Lawes, A. P. Ramirez, R. J. Cava, and N. P. Ong*, 2003, “Field tuning of the electron and hole populations in the ruthenate Bi3Ru3O11”, Europhysics Letters, 63, 860. (SCIE) (IF: 1.947; SCI ranking: 54.7%)
  
  

學術會議(研討會)論文

• [1]     C.S. Li, A.K. Singh, M.Y. Song*, and W.L. Lee*, accepted, “Spin-orbit coupled superconductivity at the interface of LaAlO3/SrTiO3 (invited paper)”, 7 pages, paper presented at SPIE Photonics West 2017, San Francisco: SPIE Europe, 2017-01-28 ~ 2017-02-01.
  
  

專書內之論文

• [1]     N. P. Ong and Wei-Li Lee, 2006, “Geometry and the Anomalous Hall Effect In Ferromagnets”, editor(s): Sachio Ishioka and Kazuo Fujikawa, Proceedings of the 8th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology (ISQM-Tokyo’05), pp. 121, Singapore: World Scientific.
  
  

發現與突破

• [1]     西元年：2023
  研究人員(中)：李偉立、Uddipta Kar, Akhilesh Kr. Singh, Yu-Te Hsu, Chih-Yu Lin, Bipul Das, Cheng-Tung Cheng, M. Berben, Song Yang, Chun-Yen Lin, Chia-Hung Hsu, S. Wiedmann, and Wei-Cheng Lee
  研究人員(英)：LEE, WEI-LI, Uddipta Kar, Akhilesh Kr. Singh, Yu-Te Hsu, Chih-Yu Lin, Bipul Das, Cheng-Tung Cheng, M. Berben, Song Yang, Chun-Yen Lin, Chia-Hung Hsu, S. Wiedmann, and Wei-Cheng Lee
  研究成果名稱(中)：窺探拓撲Weyl金屬中的Weyl量子震盪現象
  研究成果名稱(英)：A glimpse of Weyl-orbit quantum oscillations in Weyl metal SrRuO3
  簡要記述(中)：拓撲Weyl半金屬具備獨特的本體Weyl節點電子態與表面費米弧電子態的對應關聯，因此理論上存在一奇異的磁場誘發之非局域性的電子迴旋運動軌跡，此軌跡在動量空間中經由本體Weyl節點電子態來連結上表面與下表面的費米弧電子態，因而衍生出特殊的系統尺度相關之Weyl量子震盪現象。在最近由李偉立博士團隊主導的國際研究合作，此現象透過不同厚度的Weyl金屬釕氧化物薄膜系統中獲得初步的驗證。高純度且單一晶相的釕氧化物薄膜由本所氧化物分子束磊晶薄膜成長系統所成長，超高磁場環境下(35 特斯拉)的量子震盪實驗量測由位於荷蘭奈美根的歐洲強磁場實驗室Prof. Wiedmann團隊協助完成， Weyl金屬釕氧化物的相關能帶結構計算則由紐約州立大學賓漢頓分校李偉正教授團隊提供，而釕氧化物薄膜的晶格結構分析則由新竹同步輻射中心徐嘉鴻主任團隊協助完成。完整的實驗數據與分析已發表於npj Quantum Materials (https://rdcu.be/c31ub). Uddipta Kar及 Dr. Akhilesh Singh 為共同第一作者，負責量子震盪實驗量測及分析與釕氧化物薄膜成長及結構分析。
  簡要記述(英)：In a topological Weyl semimetal, the correspondence between bulk Weyl nodes and surface Fermi-arc states gives rise to a unique nonlocal cyclotron motion via the electron tunnelings between the top and bottom Fermi-arc surface states, which was referred to as the Weyl-orbit effect exhibiting an unusual thickness dependent quantum oscillations. In an international collaboration led by Dr. Wei-Li Lee’s group, such an unusual thickness dependent Weyl-orbit quantum oscillation was demonstrated in untwinned Weyl metal thin films of SrRuO3 grown by oxide molecular beam epitaxy facility at IoPAS. The quantum oscillations measurements with field up to 35 T were carried out at EMFL-Nijmegen in Netherlands in collaboration with Prof. Steffen Wiedmann’s group, and the rigorous band calculations were done by Prof. Wei-Cheng Lee’s group at SUNY Binghamton in USA. The high precision X-ray characterizations were performed at the NSRRC, Hsinchu in Taiwan in collaboration with Director Chia-Hung Hsu‘s group. The complete data and analyses have been recently published online at npj Quantum Materials (https://rdcu.be/c31ub). Uddipta Kar and Dr. Akhilesh Singh are the first two authors with equal contributions and responsible for the quantum oscillation data analyses and also the growths and structural characterizations of the SrRuO3 thin films. https://materialscommunity.springernature.com/posts/a-glimpse-of-weyl-orbit-quantum-oscillations-in-srruo3-thin-films
  

  主要相關著作：

  Uddipta Kar, Akhilesh Kr. Singh, Yu-Te Hsu, Chih-Yu Lin, Bipul Das, Cheng-Tung Cheng, M. Berben, Song Yang, Chun-Yen Lin, Chia-Hung Hsu, S. Wiedmann, Wei-Cheng Lee, and Wei-Li Lee*, 2023, “The thickness dependence of quantum oscillations in ferromagnetic Weyl metal SrRuO_3”, NPJ QUANTUM MATERIALS, 8, 8. (SCIE) (IF: 7.032; SCI ranking: 22.6%,18.1%,21.7%,17.6%)

  
  
  
• [2]     西元年：2021
  研究人員(中)：李偉立、呂倬豪、鄭承棟、李亮
  研究人員(英)：LEE, WEI-LI, Elisha Cho-Hao Lu, Cheng-Tung Cheng, Liang Li,
  研究成果名稱(中)：全電場調控非線性及不可逆的電荷輸運效應
  研究成果名稱(英)：Full electric field tuning of the nonreciprocal and nonlinear charge transport in massive chiral Fermions with trigonal warping
  簡要記述(中)：近期固態物理領域一重要的議題為非中心對稱物質體系可能存在的非線性及不可逆的電荷輸運效應(NRTE)，進而產生獨特的單一物質相之整流效應。過去此效應相關的研究報導多數須仰賴外加磁場以達到NRTE，然而最近李偉立博士研究團隊在雙柵極雙原子層石墨烯(BLG)中，實驗驗證了於零磁場環境下的全電場調控NRTE，模擬計算顯示此現象與BLG螺旋性費米子能帶具有三方扭曲性有直接關聯。此發現對於新興電子元件領域如valleytronics與 twistronics提供了未來可能運用方向。完整的研究報告已刊登於Phy. Rev. Research.
  簡要記述(英)：Recently, there are a number of interests for the non-reciprocal transport effect (NRTE) in non-centrosymmetric systems that may realize an intriguing possibility of current rectification via a single-phase material. Most of the reported single-phase systems with NRTE require a finite external magnetic field owing to the magneto-electric anisotropy term in the form of k∙
  

  主要相關著作：

  Elisha Cho-Hao Lu, Cheng-Tung Cheng , Liang Li, Wei-Li Lee*, 2021, “Full electric-field tuning of the nonreciprocal transport effect in massive chiral fermions with trigonal warping”, Physical Review Research, 3(3), 033160.

  
  
  
• [3]     西元年：2020
  研究人員(中)：李偉立、Akhilesh Kr. Singh，吳宗錡，宋明遠，陳民秦，李啟申，葉崇傑
  研究人員(英)：LEE, WEI-LI, Akhilesh Kr. Singh, Tsung-Chi Wu, Ming-Yuan Song, Ming-Chin Chen, Chi-Sheng Li, S.-K. Yip
  研究成果名稱(中)：氧化物介面超導的電子多重相
  研究成果名稱(英)：Electronic phase separation for the interface superconductivity in LaAlO3/SrTiO3
  簡要記述(中)：庫柏電子對的是否形成與該電子所在之電子軌域性質有關，因此可能產生一個特殊超流體與一般流體共存的超導相。最近由本所李偉立博士與葉崇傑博士所主導的研究顯示此共存的超導相極可能發生於LaAlO3/SrTiO3氧化物介面超導系統。電子軌域性質直接影響了電子的自旋軌道耦合，而自旋軌道耦合參數可獨立的透過非超導相的電磁輸運弱局域模型或超導相的臨界磁場分析來獲得。我們進一步提出一個有效的臨界磁場分析方法，可適用於極低相變溫度且強自旋軌道耦合的超導體系。運用本所氧化物磊晶超薄膜成長系統製備的高純度LaAlO3/SrTiO3氧化物介面超導系統，結合完整的低溫電磁輸運與相關理論分析，我們發現臨界磁場分析所決定的自旋軌道耦合參數與透過非超導相弱局域模型分析的結果有著巨大的差異，顯示超導相與非超導相中主導電子輸運的電子軌域是不同的。此發現對於超導相中庫柏電子對形成時具有的電子軌域選擇性現象提出了有力的證據。完整的研究結果已發表於美國物理協會新的開放取用期刊：Physical Review Research (Phys. Rev. Research 2, 013311 (2020)).
  簡要記述(英)：The formation of Cooper pairs can be more favorable for electrons from certain orbitals, giving rise to an unusual state with the coexistence of normal fluid and superfluid. In a recent work led by Dr. Wei-Li Lee and Dr. Sungkit Yip, such a phase is likely to happen for the interface superconductivity in LaAlO3/SrTiO3. The orbital nature of an electron largely affects its spin-orbit interaction, which can be determined independently either from the weak-localization model in normal state or from the upper critical fields in superconducting state. We have developed a practical scheme to extract spin-orbit parameters from upper critical fields for low transition temperature superconducting systems with strong spin-orbit coupling. A striking discrepancy in the extracted spin-orbit coupling parameters was uncovered for the first time in high quality LaAlO3/SrTiO3 samples grown by oxide molecular beam epitaxy technique, indicating a difference in the spin-relaxation mechanism for the charge transport above and below the superconducting transition temperature. Such a finding supports for a possible orbital selectivity for the Cooper pairing and thus an electronic phase separation at the interface of LaAlO3/SrTiO3 that may shed some lights toward understanding the exotic low-density superconductivity. Those results were published in the new APS open access journal of Physical Review Research (PRR 2, 013311(2020)).
  

  主要相關著作：

  Akhilesh Kr. Singh, Tsung-Chi Wu, Ming-Yuan Song, Ming-Chin Chen, Chi-Sheng Li, S.-K. Yip, and Wei-Li Lee*, 2020, “Determination of spin-orbit scattering lifetime at the interface of LaAlO3/SrTiO3 from the superconducting upper critical fields”, Physical Review Research, 2, 013311.

  
  
  
• [4]     西元年：2020
  研究人員(中)：李偉立、李偉正、Akhilesh Kr. Singh、Uddipta Kar、Matthew D. Redell、吳宗錡、彭偉翔、Bipul Das, Satish Kumar,
  研究人員(英)：LEE, WEI-LI, Wei-Cheng Lee, Akhilesh Kr. Singh, Uddipta Kar, Matthew D. Redell, Tsung-Chi Wu, Wei-Hsiang Peng, Bipul Das, Satish Kumar
  研究成果名稱(中)：SrTiO3表面原子結構重組所衍生的奇異表面電子態
  研究成果名稱(英)：Revelation of the exotic electronic states in surface-reconstructed SrTiO3
  簡要記述(中)：過去研究顯示絕緣氧化物SrTiO3的表面氧空缺(OVs)將導致表面原子結構的重組並使其具電導性，理論計算進一步預測亦將衍生表面磁性及特殊的自旋極化電子態於能隙之中。然而SrTiO3表面氧空缺(SR-STO)在正常環境下並非穩定的存在，因此實驗上的驗證極具挑戰性。在最近一項由本所李偉立博士及美國SUNY賓漢頓大學李偉正教授所主導的研究工作，此奇異表面電子態可透過超導薄膜(SC)的接近耦合於SR-STO來探究。Dr. Akhilesh Singh 及 Uddipta Kar分別為論文的第一及第二作者，他們運用本所超高真空多腔體連結整合設施中的氧化物分子束磊晶系統與電子束繞射系統來製備及鑑定SR-STO，在維持超高真空環境下將超導鈮(Nb)金屬薄膜接續鍍至SR-STO上以確保介面的高品質。我們首次在SC/SR-STO的異質結構中，發現了奇特的磁場衍生之電阻峰效應。結合磁性量測與密度泛函理論計算結果，我們提出了一個以SC與高自旋極化金屬的介面電組為基礎的有效模型，對磁場衍生之電阻峰效應提出自我相容的解釋。此研究結果為SR-STO中具有高度自旋極化電子態於能隙中提出了有力的實驗證據。
  簡要記述(英)：Oxygen vacancies (OVs) on the surface of a wide band-gap SrTiO3 (STO) were known to induce surface reconstructions (SR), which not only resulted in electron dopings but also was theoretically predicted to show magnetism with unusual spin-polarized in-gap states. Experimental confirmations for those exotic states are hampered by the difficulty of maintaining such surface structures under ambient conditions. In a recent collaborating work led by Dr. Wei-Li Lee at IoPAS and Prof. Wei-Cheng Lee at Binghamton University SUNY, such exotic electronic states in SR-STO were revealed by proximity coupling a superconductor (SC), serving as a probe and also a protection layer, to a SR-STO. Dr. Akhilesh Singh and Uddipta Kar, who are the first and the second authors of the paper, utilized the interconnected multi-UHV chambers facility at IoPAS. The SR-STO was prepared and characterized via electron diffraction under UHV followed by UHV deposition of superconducting niobium (Nb) thin films to ensure a clean interface between SC and SR-STO. An unusual and generic field-induced peak resistance effect was uncovered for the first time in such a hybrid SC/SR-STO system. Combining magnetization measurements and also detailed DFT calculations, we proposed a model based on the interface resistance between a SC and a highly spin-polarized metal that gives a self-consistent explanation to the observed field-induced peak resistance effect. Our results strongly support for the existence of spin-polarized in-gap states in SR-STO. The complete work has been published recently on npj Quantum Materials. (npj Quantum Mater. 5, 45 (2020), link: https://rdcu.be/b5rPk )
  

  主要相關著作：

  Akhilesh Kr. Singh, Uddipta Kar, Matthew D. Redell, Tsung-Chi Wu, Wei-Hsiang Peng, Bipul Das, Satish Kumar, Wei-Cheng Lee*, and Wei-Li Lee*, 2020, “Field-induced resistance peak in a superconducting niobium thin film proximity coupled to a surface reconstructed SrTiO3”, npj Quantum Materials, 5, 45. (SCIE) (IF: 7.032; SCI ranking: 22.6%,18.1%,21.7%,17.6%)

  
  
  
• [5]     西元年：2018
  研究人員(中)：李偉立、Akhilesh Kr. Singh、吳宗錡、陳民秦、宋明遠、蘇家平、朱明文
  研究人員(英)：LEE, WEI-LI, Akhilesh Kr. Singh, Tsung-Chi Wu, Ming-Chin Chen, Ming-Yuan Song, Chia-Ping Su, M.-W Chu
  研究成果名稱(中)：複雜氧化物介面中類二維導電電洞層(q2DHG)存在的實驗證據
  研究成果名稱(英)：The experimental evidence for the existence of quasi-two-dimensional hole gas at complex oxide interface
  簡要記述(中)：類二維導電電子層(q2DEG)已在許多複雜氧化物的介面被發現，然而類二維導電電洞層(q2DHG)存在的可能性及實驗驗證仍然備受爭議。由本所李偉立副研究員與台大凝態中心朱明文研究員所領導的研究團隊，第一作者Akhilesh Singh 博士運用本所氧化物分子束磊晶系統成長出高品質的氧化物超薄磊晶薄膜樣品，並進一步製作場效 SrTiO3(6-uc)/LaAlO3(5-uc)/SrTiO3 (100) 元件以達成電場調控介面導電層之目的。透過完整的低溫電磁傳輸實驗量測與電場調控，搭配嚴格的傳輸模型分析與實驗數據的配合，我們實驗證實了q2DHG 確實可存在於複雜氧化物的介面。猶如電子與電洞可衍生出許不同特性的半導體元件， q2DHG 的存在除了將大幅擴展了複雜氧化物元件設計的可能性外，在基礎物理現象的探索與發掘也提供了一個新的方向。完整的研究報告已發表於 Physical Review Materials (Phys. Rev. Mater. 2, 114009 (2018)).
  簡要記述(英)：A number of discoveries have been made for the quasi-two-dimensional electron gas (q2DEG) at the complex oxide interface systems, but the possibility of a quasi-two-dimensional hole gas (q2DHG) at complex oxide interface and its experimental confirmation remain debatable. In a recent collaborating work led by Dr. Wei-Li Lee at IoP AS and Dr. Ming-Wen Chu at CCMS NTU, high quality ultra-thin epitaxial oxide films were grown and characterized by Dr. Akhilesh Singh, who is the first author of the published paper, using an oxide molecular beam epitaxy facility at IoP AS. Electric gated devices based on SrTiO3(6-uc)/LaAlO3(5-uc)/SrTiO3 (100) were then fabricated to further tune the interface conducting channels. From complete low-temperature magneto-transport measurements with a gate voltage tuning, the data were analyzed and fitted rigorously using the two-band transport model, which confirms the existence of such a q2DHG at oxide interface. The existence of both electrons and holes has enriched the functionality for semiconductor-based devices in the past. The existence of q2DHG at complex oxide interface not only largely extends the scope for complex oxide electronics but also provides a new platform for exploring new fundamental physical phenomena in matter. This work has recently published in Physical Review Materials (Phys. Rev. Mater. 2, 114009 (2018)).
  
  
  
• [6]     西元年：2017
  研究人員(中)：李偉立、陳亭卉、孔祥曦、王昶然、謝佳祚
  研究人員(英)：LEE, WEI-LI, Ting-Hui Chen, Hsiang-Hsi Kung, Chang-Ran Wang, Chia-Tso Hsieh,
  研究成果名稱(中)：人造奈米結構影響超導相位擾動的實驗證據
  研究成果名稱(英)：Enhanced superconducting phase fluctuation via artificial nanostructure engineering
  簡要記述(中)：在傳統的金屬超導體系統中， 極大的Cooper pair 密度致使超導相位的剛性極高因而無法顯現出豐富之相位擾動相關的物理現象。最近由李偉立副研究員領導的研究團隊，實驗驗證超導相位的剛性能透過人造且有序之奈米孔洞結構，以形成相互連結之鈮薄膜奈米蜂窩結構(INHL)來有效的降低超導相位的剛性。運用本實驗室先前研發之獨特技術，第一作者陳亭卉小姐成功的製備出令人驚豔的一系列 INHL樣品，這些樣品具備次100奈米的結構超過十億個單元延伸至數個毫米的樣品尺寸，並首次發現了特殊且反常的超導相變溫度寬度隨著外加磁場變窄的現象。而在零磁場下較寬大的相變溫度寬度，正是緣於有趣的相位滑移(phase slips)及磁通線(flux-line lattice)相互作用而衍生之超導相位擾動大幅增加的現象。此研究工作首次揭露運用人造奈米結構以影響超導薄膜相位剛性的可行性。詳細的結果已發表於Phys. Rev. B Rapid Communications (Phys. Rev. B 96, 020506 (R)(2017))
  簡要記述(英)：In a conventional superconductor, a large Cooper pair density gives rise to a extremely stiff phase rigidity, thus obscuring the rich phenomena associated with phase fluctuations. In a recent work led by Dr. Wei-Li Lee’s team, the phase rigidity in superconducting niobium (Nb) films can be effectively reduced by imposing well-ordered anti-dots, forming a interconnected Nb honeycomb lattice (INHL). By using a special technique we developed previously, the first author, Ms. Ting-Hui Chen, succeeded in fabricating a remarkable series of INHLs with sub-100nm nanostructures extending over 108 cells and up to few millimeters in size, where an unusual superconducting transition width narrowing in fields was observed for the first time in superconducting systems. The broadened transition width in zero field is a direct consequence of the enhanced phase fluctuations due to the intriguing interplay between the phase slips and flux-line lattice. Our works demonstrate the feasibility of reducing the phase rigidity in a superconductor via artificial nanostructure engineering. The complete results have been published in the Physical Review B Rapid Communications (Phys. Rev. B 96, 020506 (R)(2017))
  

  主要相關著作：

  Ting-Hui Chen, Hsiang-Hsi Kung, Chang-Ran Wang, Chia-Tso Hsieh, and Wei-Li Lee*, 2017, “Evidence for enhanced phase fluctuations in nanostructured niobium thin films”, PHYSICAL REVIEW B, Rapid Communications 96, 020506(R). (SCIE) (IF: 4.036; SCI ranking: 38.7%,25.6%,31.9%)

  
  
  
• [7]     西元年：2014
  研究人員(中)：李偉立
  研究人員(英)：LEE, WEI-LI, Xufeng Kou, Shih-Ting Guo, Yabin Fan, Lei Pan, Murong Lang, Ying Jiang, Qiming Shao, Tianxiao Nie, Koichi Murata, Jianshi Tang, Yong Wang, Liang He, Ting-Kuo Lee, and Kang L. Wang
  研究成果名稱(中)：量子異常霍爾效應首次於大尺度及三維度鐵磁性拓樸絕緣體中獲得實驗證實
  研究成果名稱(英)：Demonstration of robust quantum anomalous Hall effect (QAHE) in macroscopic and 3D ferromagnetic topological insulator system.
  簡要記述(中)：異常霍爾效應描述磁性系統 中異常霍爾電阻正比於其磁矩的現象。在一般鐵磁金屬與半導體中，異常霍爾電阻並無單一基本通用的數值(量子化)。然而在鐵磁性拓樸絕緣體中並且無外加磁場條件下，非簡單的本體能帶拓樸所形成的狄拉克錐形表面電子態會產生不同的有效質量區，進而衍生出無耗損的螺旋性邊界傳輸通道，並顯現出獨特的異常霍爾電阻量子化現象。由本所李偉立副研究員及美國加州大學洛杉磯分校王康隆教授所主導的跨國研究團隊，首次在鐵磁性拓樸絕緣體中進一步實驗證實此效應可擴展至大尺度及三維度的體系。此結果對於無耗損螺旋性邊界傳輸通道運用於降低電子元件能量耗損的可能性，提出正面的支持。完整的實驗結果已發表於物理評論快訊(Physical Review Letters).
  http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.113.137201
  
  簡要記述(英)：Anomalous Hall effect refers to the phenomenon of linear proportionality between the anomalous Hall resistance and its magnetic moment in a magnetic system. In normal magnetic metal and semiconductor, there is no universal value for the anomalous Hall resistance. Nevertheless, in a ferromagnetic topological insulator (FM TI) under zero external magnetic field, the Dirac surface states, originating from the non-trivial bulk band topology, attain different effective masses on different surfaces. This results in a dissipationless chiral edge channel forming at the Dirac fermion mass domain-wall and gives rise to the quantization of the anomalous Hall resistance. In a recent international collaborating work led by Dr. Wei-Li Lee at IoP and Prof. K.L. Wang at UCLA USA, this effect was further demonstrated in a macroscopic and 3D FM TI. This may provide a new direction for resolving the heat dissipation problem in electronics using dissipationless chiral edge channel in a topological material. Detailed experimental results have been recently published in Physical Review Letters.
  http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.113.137201
  
  

  主要相關著作：

  Xufeng Kou, Shih-Ting Guo, Yabin Fan, Lei Pan, Murong Lang, Ying Jiang, Qiming Shao, Tianxiao Nie, Koichi Murata, Jianshi Tang, Yong Wang, Liang He, Ting-Kuo Lee, Wei-Li Lee*, and Kang L. Wang* , 2014, “Scale-Invariant Quantum Anomalous Hall Effect in Magnetic Topological Insulators beyond the Two-Dimensional Limit”, PHYSICAL REVIEW LETTERS, 113, 137201. (SCIE) (IF: 9.161; SCI ranking: 8.1%)

  
  
  
• [8]     西元年：2011
  研究人員(中)：李偉立、王昶然、呂文森、郝雷、李定國、林鋒、陳亦君、陳建彰
  研究人員(英)：LEE, WEI-LI, Chang-Ran Wang, Wen-Sen Lu, Lei Hao, Ting-Kuo Lee, Feng Lin, I-Chun Cheng, and Jian-Zhang Chen
  研究成果名稱(中)：首次於雙層石墨烯元件中驗證“場效熱電效應”
  研究成果名稱(英)：First demonstration of the “field-effect thermoelectricity” in a bilayer graphene device
  簡要記述(中)：本所李偉立助研究員所主導的雙柵極雙層石墨烯(dual-gated bilayer graphene)元件研究計畫中，首次實驗驗證“場效熱電效應”。當外加一垂直電場(D)於雙原子層石墨片時，並且在載子濃度約略相同的條件下，其熱電能(thermopower)仍最多可被放大四倍以上，已超越一些知名的低溫熱電材料。此現象的核心物理機制源於電場衍生之反對稱性破壞 (inversion symmetry breaking)造成了能隙(band gap)的產生，進而增加能帶曲率(band curvature)。此外，熱電能的極性(polarity)亦可簡單運用柵極電壓(gate voltage)來調控成為電子型或電洞型。此研究成果為熱電相關研究領域提供一個全新的思考方向，完整的結果資料已發表於物理評論通訊(Physical Review Letters 107, 186602 (2011))。
  簡要記述(英)：In a research project on dual-gated bilayer graphene devices led by Dr. Wei-Li Lee, the “field-effect thermoelectricity” has been demonstrated for the first time. When applying a perpendicular electric field (D) on a bilayer graphene, the thermoelectric power (TEP) can be amplified more than 4 folds while the carrier density remains the same. The value of TEP is comparable to or exceeding several known low temperature thermoelectric materials. The physical mechanism is rooted in the band-gap opening due to the inversion symmetry breaking by D, which largely increases the band curvature near the band edges. On the other hand, its polarity can be readily tuned by the gate voltage to be either electron-type or hole-type. Our results open up a new possibility in thermoelectric application using graphene-based device. Complete data and analysis have been published in Physical Review Letters (PRL 107, 186602 (2011)).
  

  主要相關著作：

  Chang-Ran Wang, Wen-Sen Lu, Lei Hao, Wei-Li Lee*, Ting-Kuo Lee, Feng Lin, I-Chun Cheng, and Jian-Zhang Chen, 2011, “Enhanced Thermoelectric Power in Dual-Gated Bilayer Graphene”, PHYSICAL REVIEW LETTERS, 107, 186602. (SCIE) (IF: 9.161; SCI ranking: 8.1%)