中央研究院物理研究所

研究成果

期刊論文

[1] H. C. Wu*, Y. H. Liao, C. C. Tsai, P. Y. Yang, Y. H. Chang, Y. H. Liang, D. Chandrasekhar Kakarla1, A. Tiwari, C. Dhanasekhar, C. W. Wang, D. Okuyama, C. N. Kuo, C. S. Lue, T. H. Weng, K.-H. Lin, J. W. Chiou, C. H. Lee, and H. D. Yang*, 2026, “New High-Tc Charge-Transfer Multiferroicity in the Quasi-2D Antiferromagnet CrSbS $_3$ ”, Advanced Science, 13, e23579. (SCIE) (IF: 14.1; SCI ranking: 9.1%,7.9%,11.2%)
[2] H-Y. Cheng, M.-J. Ye, L.-H. Chen, Y.-Y. Wang, S.-W. Chu, Y.-L. Huang, Y.-J. Lu, K.-P. Chen, and K.-H. Lin*, 2025, “Dynamic control of photoresponse in VO $_2$ through phase manipulation”, ADVANCED OPTICAL MATERIALS, 13, e01935. (SCIE) (IF: 7.2; SCI ranking: 21%,12.1%)
[3] T.-H. Wu* and K.-H. Lin*, 2025, “Out-of-plane optical absorption, emission and carrier dynamics in layered materials”, 2D MATERIALS, 12 (4), 042007. (SCIE) (IF: 4.3; SCI ranking: 39.9%,53.3%,29.2%)
[4] R. Moqbel*, L.-T. Huang, and K.-H. Lin*, 2025, “Cutting-edge advances in ferroic few-layer group IV monochalcogenides and their future technological applications”, 2D MATERIALS, 12(4), 042002. (SCIE) (IF: 4.3; SCI ranking: 39.9%,53.3%,29.2%)
[5] L.-T. Huang, R. Moqbel, C. Chen, M.-H. Lee, C.-C. Lee, N. Mao, T. Zhang, Y. Zhu, J. Kong, and K.-H. Lin*, 2025, “Anisotropy of second harmonic generation in SnSe flakes with ferroelectric stacking”, Advanced Photonics Research, 6, 2500033. (SCIE)
[6] T.-H. Wu, C.-E. Hsu, R. K. Ulaganathan, R. Sankar, Z. Li, C.-C. Lee, C.-S. Chang, and K.-H. Lin*, 2025, “Anisotropic screening of excitons in van der Waals materials”, NPJ 2D MATERIALS AND APPLICATIONS, 9, 37. (SCIE) (IF: 8.8; SCI ranking: 15.2%,23.4%,13.7%)
[7] M. Mustaqeem*, Z-B. Jin, W. C. Tsai, M. A. Gondal*, P.-T. Chou, T.-H. Wu, K.-H. Lin, J. Zhang, Z.-G. Gu*, and Y.-F. Chen*, 2025, “Mechanically tuneable circularly polarized flexible spin light emitting diodes”, ADVANCED OPTICAL MATERIALS, 13 (15), 2500060. (SCIE) (IF: 7.2; SCI ranking: 21%,12.1%)
[8] K. Nishida, H.-Y. Cheng, M. Petrov, K.-P. Chen, J. Takahara, X. Li, K.-H. Lin*, and S.-W. Chu*, 2024, “All-optical control of semiconductor nanostructure scattering/absorption via the photothermal effect”, JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 41(11), D61-D74. (SCIE) (IF: 1.9; SCI ranking: 66.7%)
[9] C.-H. Huang, C. S. Gantepogu, P.-J. Chen, T.-H. Wu, W.-R. Liu, K.-H. Lin, C.-L. Chen, T.-K. Lee, M.-J. Wang*, and M.-K. Wu*, 2024, “Substrate charge transfer induced ferromagnetism in MnSe/SrTiO $_3$ ultrathin films”, NANOMATERIALS, 14 (16), 1355. (SCIE) (IF: 4.3; SCI ranking: 36.6%,39.9%,53.3%,29.2%)
[10] R. Nanae, S. Kitamura, Y.-R. Chang, K. Kanahashi, T. Nishimura, R. Moqbel, K.-H. Lin, M. Maruyama, Y. Gao, S. Okada, K. Qi, J.-H. Fu, V. Tung, T. Taniguchi, K. Watanabe, Y. K. Kato, and K. Nagashio*, 2024, “Bulk photovoltaic effect in single ferroelectric domain of SnS crystal and control of local polarization by strain”, ADVANCED FUNCTIONAL MATERIALS, 34 (41), 2406140. (SCIE) (IF: 19; SCI ranking: 6.3%,6.1%,5.5%,7.5%,5%,7.5%)
[11] R. Moqbel, R. Nanae, S. Kitamura, M.-H. Lee, Y.-W. Lan, C.-C. Lee, K. Nagashio*, and K.-H. Lin*, 2024, “Giant Second-order Nonlinearity and Anisotropy of Large-sized Few-layer SnS with Ferroelectric Stacking”, ADVANCED OPTICAL MATERIALS, 12(19), 2400355. (SCIE) (IF: 7.2; SCI ranking: 21%,12.1%)
[12] P. Ganesan, C. S. Gantepogu, S. Duraisamy, S. M. Valiyaveettil, W.-H. Tsai, C.-R. Hsing, K.-H. Lin, K.-H. Chen, Y.-Y. Chen, and M.-K. Wu*, 2024, “Carrier optimization and reduced thermal conductivity leading to enhanced thermoelectric performance in (Mg, S) co-doped AgSbTe $_2$ ”, Materials Today Physics, 42, 101358. (SCIE) (IF: 9.7; SCI ranking: 12.5%,10.6%)
[13] H.-Y. Cheng, M.-J. Ye, W.-R. Chen, C.-Y. Yang, S.-W. Chu, K.-P. Chen*, and K.-H. Lin*, 2023, “Large Optical Modulation of Dielectric Huygens’ Metasurface Absorber”, ADVANCED OPTICAL MATERIALS, 11(10), 2300102. (SCIE) (IF: 7.2; SCI ranking: 21%,12.1%)
[14] D. S. Kim, D. Huang, C. Guo, K. Li, D. Rocca, F. Y. Gao, J. Choe, D. Lujan, T.-H. Wu, K.-H. Lin, E. Baldini, L. Yang, S. Sharma, R. Kalivanan, R. Shankar, S.-F. Lee, Y. Ping*, and X. Li*, 2023, “Anisotropic Excitons Reveal Local Spin Chain Directions in a van der Waals Antiferromagnet”, ADVANCED MATERIALS, 35 (19), 2206585. (SCIE) (IF: 26.8; SCI ranking: 3.4%,2.5%,2.6%,3.7%,3.1%,4.5%)
[15] M. Mustaqeem, P.-T. Chou, S. Kamal, N. Ahmad, J.-Y. Lin, Y.-J. Lu, K.-H. Lin, K.-L. Lu, Y.-F. Chen*, 2023, “Solution-Processed and Room-Temperature Spin Light-Emitting Diode Based on Quantum Dots/Chiral Metal-Organic Framework Heterostructure”, ADVANCED FUNCTIONAL MATERIALS, 33 (19), 2213587. (SCIE) (IF: 19; SCI ranking: 6.3%,6.1%,5.5%,7.5%,5%,7.5%)
[16] Z.-Y. Li, H.-Y. Cheng, S.-H. Kung, H.-C. Yao, C. R. P. Inbaraj, R. Sankar, M.-N. Ou, Y.-F. Chen, C.-C. Lee*, and K.-H. Lin*, 2023, “Uniaxial Strain Dependence on Angle-Resolved Optical Second Harmonic Generation from a Few Layers of Indium Selenide”, NANOMATERIALS, 13(4), 750. (SCIE) (IF: 4.3; SCI ranking: 36.6%,39.9%,53.3%,29.2%)
[17] M. Mustaqeem, S. Kamal, N. Ahmad, P.-T. Chou, K.-H. Lin, Y.-C. Huang, G.-Y. Guo, C. R. P. Inbaraj, W.-K. Li, H.-C. Yao, K.-L. Lu*, Y.-F. Chen*, 2023, “Chiral Metal-Organic Framework Based Spin-Polarized Flexible Photodetector with Ultrahigh Sensitivity”, MATERIALS TODAY NANO, 21, 100303. (SCIE) (IF: 8.2; SCI ranking: 16.9%,24.3%)
[18] T.-H. Wu, H.-Y. Cheng, W.-C. Lai, R. Sankar, C.-S. Chang*, and K.-H. Lin*, 2023, “Ultrafast Carrier Dynamics and Layer-Dependent Carrier Recombination Rate in InSe”, NANOSCALE, 15(7), 3169-3176. (SCIE) (IF: 5.1; SCI ranking: 30.3%,32.1%,41.1%,22.4%)
[19] R. Moqbel, Y.-R. Chang, Z.-Y. Li, S.-H. Kung, H.-Y. Cheng, C.-C. Lee, K. Nagashio*, and K.-H. Lin*, 2023, “Wavelength dependence of polarization-resolved second harmonic generation from ferroelectric SnS few layers”, 2D MATERIALS, 10(1), 015022. (SCIE) (IF: 4.3; SCI ranking: 39.9%,53.3%,29.2%)
[20] M. A. C. Aguila*, J. C. Esmenda, J.-Y. Wang, Y.-C. Chen, T.-H. Lee, C.-Y. Yang, K.-H. Lin, K.-S. Chang-Laio, S. Kafanov, Y. Pashkin, and C.-D. Chen*, 2022, “Photothermal responsivity of van der Waals material-based nanomechanical resonators”, NANOMATERIALS, 12 (15), 2675. (SCIE) (IF: 4.3; SCI ranking: 36.6%,39.9%,53.3%,29.2%)
[21] T.-C. Yen, W.-C. Huang, C.-Y. Lin, M.-C. Chen*, K.-H. Lin*, and I.-S. Hwang*, 2022, “Reliable preparation and regeneration of well-defined single-atom tips through laser annealing”, Nanoscale Advances, 4 (19), 4138-4143. (SCIE) (IF: 4.7; SCI ranking: 33.7%,34.1%,44.9%)
[22] J. C. Esmenda*, M. A. C. Aguila*, J.-Y. Wang, T.-H. Lee, Y.-C. Chen, C.-Y. Yang, K.-H. Lin, K.-S. Chang-Laio, S. Kafanov, Y. Pashkin, and C.-D. Chen*, 2022, “Optoelectrical nanomechanical resonators made from multilayered two-dimensional materials”, ACS Applied Nano Materials, 5 (7), 8875-8882. (SCIE) (IF: 5.5; SCI ranking: 30.9%,37.4%)
[23] W.-B. Su*, S.-M. Lu, H.-H. Chang, H.-T. Jeng*, W.-Y. Chan, P.-C. Jiang, K.-H. Lin, C.-S. Chang, 2022, “Impact of band structure on wave function dissipation in field emission resonance”, PHYSICAL REVIEW B, 105 (19), 195411. (SCIE) (IF: 3.7; SCI ranking: 46.1%,34.8%,38.8%)
[24] M. A. C. Aguila*, J. C. Esmenda*, J.-Y. Wang, T.-H. Lee, C.-Y. Yang, K.-H. Lin, K.-S. Chang-Laio, S. Kafanov, Y. Pashkin, and C.-D. Chen*, 2022, “Fabry-Perot interferometric calibration of van der Waals material-based nanomechanical resonators”, Nanoscale Advances, 4(2), 502-509. (SCIE) (IF: 4.7; SCI ranking: 33.7%,34.1%,44.9%)
[25] G.-J. Huang, H.-Y. Cheng, Y.-L. Tang, H. Ikuto, J. Takahara, K.-H. Lin*, and S.-W. Chu*, 2022, “Transient super-/sub-linear nonlinearities in silicon nanostructures”, ADVANCED OPTICAL MATERIALS, 10 (5), 2101711. (SCIE) (IF: 7.2; SCI ranking: 21%,12.1%)
[26] J. C. Esmenda*, M. A. C. Aguila, J.-Y. Wang, T.-H. Lee, C.-Y. Yang, K.-H. Lin, K.-S. Chang-Laio, N. Katz, S. Kafanov, Y. Pashkin, and C.-D. Chen*, 2021, “Observing off-resonance motion of nanomechanical resonators as modal superposition”, ADVANCED SCIENCE, 8(13), 2005041. (SCIE) (IF: 14.1; SCI ranking: 9.1%,7.9%,11.2%)
[27] A. Gupta, M. K. Thakur, T. A. Effendi, R.-S. Chen, H.-Y. Cheng, K.-H. Lin, and S. Chattopadhyay*, 2021, “Metallo-graphene enhanced upconversion luminescence for broadband photodetection under polychromatic illumination”, CHEMICAL ENGINEERING JOURNAL, 420 (2), 127608. (SCIE) (IF: 13.2; SCI ranking: 5%,5.7%)
[28] C.-Y. Yang, P.-C. Wu, Y.-H. Chu, and K.-H. Lin*, 2021, “Generation and coherent control of terahertz coherent acoustic phonons in superlattices of perovskite oxides”, NEW JOURNAL OF PHYSICS, 23(5), 053009. (SCIE) (IF: 2.8; SCI ranking: 41.2%)
[29] Y.-S. Duh, Y. Nagasaki, Y.-L. Tang, P.-H. Wu, H.-Y. Cheng, T.-H. Yen, H.-X. Ding, K. Nishida, I. Hotta, J.-H. Yang, Y.-P. Lo, K.-P. Chen, K. Fujita, C.-W. Chang, K.-H. Lin*, J. Takahara*, and S.-W. Chu*, 2020, “Giant photothermal nonlinearity in single silicon nanostructure”, NATURE COMMUNICATIONS, 11, 4101. (SCIE) (IF: 15.7; SCI ranking: 10.8%)
[30] C.-F. Lin, C.-F. Su, K.-H. Lin, Y.-S. Hsieh, and Y.-C. Cheng*,, 2020, “Protein crosslinking and immobilization in 3D microfluidics thorough multiphoton absorption”, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 9(11), 115013. (SCIE) (IF: 2.2; SCI ranking: 70%,62.7%)
[31] C. R. P. Inbaraj, R. J. Mathew, R. K. Ulaganathan, R. Sankar, M. Kataria, H. Y. Lin, H.-Y. Cheng, K.-H. Lin, H.-I Lin, Y.-M. Liao, F. C. Chou, Y.-T. Chen, C.-H. Lee, and Y.-F. Chen*, 2020, “Modulating charge separation with h-BN mediation in vertical van der Waals heterostructures”, ACS APPLIED MATERIALS & INTERFACES, 12(23), 26213-26221. (SCIE) (IF: 8.2; SCI ranking: 16.9%,24.3%)
[32] M. Kataria, K. Yadav, A. Nain, H.-I Lin, H.-W. Hu, C. R. P. Inbaraj, T.-J. Chang, Y.-M. Liao, H.-Y. Cheng, K.-H. Lin, H.-T. Chang, F.-G. Tseng, W.-H. Wang, and Y.-F. Chen*, 2020, “Self-sufficient and highly efficient gold sandwich upconversion nanocomposite lasers for stretchable and bio-applications”, ACS APPLIED MATERIALS & INTERFACES, 12 (17), 19840-19854. (SCIE) (IF: 8.2; SCI ranking: 16.9%,24.3%)
[33] E.-X. Chen, H.-Y. Cheng, Z.-G. Chen, W.-L. Chen, M. Kataria, Y.-M. Chang, Y.-F. Chen, W.-B. Su, and K.-H. Lin*, 2020, “Enhancement of ultrafast Photoluminescence from deformed graphene studied by optical localization microscopy”, NEW JOURNAL OF PHYSICS, 22 (1), 013001. (SCIE) (IF: 2.8; SCI ranking: 41.2%)
[34] C. R. P. Inbaraj, V. K. Gudelli, R. J. Mathew, R. K. Ulaganathan, R. Sankar, H. Y. Lin, H.-I Lin, Y.-M. Liao, H.-Y. Cheng, K.-H. Lin, F. C. Chou, Y.-T. Chen, C.-H. Lee, G.-Y. Guo, and Y.-F. Chen*, 2019, “Sn-doping enhanced ultra-high mobility In $_{1-x}$ Sn $_x$ Se phototransistor”, ACS APPLIED MATERIALS & INTERFACES, 11 (27), 24269-24278. (SCIE) (IF: 8.2; SCI ranking: 16.9%,24.3%)
[35] A. Gupta, H.-Y. Cheng, K.-H. Lin, C. T. Wu, P. K. Roy, S. Ghosh, and S. Chattopadhyay*, 2019, “Gold coated Cicada wings: anti-reflective micro-environment for plasmonic enhancement of fluorescence from upconversion nanoparticles”, MATERIALS SCIENCE & ENGINEERING C-MATERIALS FOR BIOLOGICAL APPLICATIONS, 102, 569-577. (SCIE) (IF: 8.1; SCI ranking: 15.9%)
[36] M. K. Thakur, A. Gupta, M. Y. Fakhri, R. S. Chen, C. T. Wu, K.-H. Lin, and S. Chattopadhyay*, 2019, “Optically coupled engineered upconversion nanoparticles and graphene for high responsivity broadband photodetector”, NANOSCALE, 11 (19), 9716. (SCIE) (IF: 5.1; SCI ranking: 30.3%,32.1%,41.1%,22.4%)
[37] Fan J. W., R. A. Mole, S. K. Karna, J.-W. Shi, J.-K. Sheu, and K.-H. Lin*, 2019, “Verification of complex acoustic mismatch model in sub-THz regime”, APPLIED PHYSICS LETTERS, 114 (15), 151106. (SCIE, EI) (IF: 3.6; SCI ranking: 35.4%)
[38] G. Haider, H.-I. Lin, K. Yadav, Y.-M. Liao, H.-W. Hu, K.-C. Shen, P. K. Roy, K.-H. Lin, Y.-T. Chen, F.-R. Chen, and Y.-F. Chen*, 2018, “A Highly-Efficient Single Segment White Random Laser”, ACS Nano, 12(12), 11847-11859. (SCIE) (IF: 16.1; SCI ranking: 8%,8.6%,6.7%,10.3%)
[39] K.-H. Lin*, H.-Y. Cheng, C.-Y. Yang, H.-W. Li, C.-W. Chang, and S.-W. Chu*, 2018, “Phonon dynamics of single nanoparticles studied using confocal pump-probe backscattering”, APPLIED PHYSICS LETTERS, 113, 171906. (SCIE) (IF: 3.6; SCI ranking: 35.4%)
[40] C.-Y. Yang and K.-H. Lin*, 2018, “Temperature-dependence of hypersound dynamics in SrRuO $_3$ /SrTiO $_3$ heterostructures”, Physical Review B, 98(6), 064308. (SCIE) (IF: 3.7; SCI ranking: 46.1%,34.8%,38.8%)
[41] H.-Y. Cheng, C.-Y. Yang, L.-C. Yang, K.-C. Peng, C.-T. Chia, S.-J. Liu, I-N. Lin and K.-H. Lin*, 2018, “Effective thermal and mechanical properties of polycrystalline diamond films”, JOURNAL OF APPLIED PHYSICS, 123 (16), 165105. (SCIE, EI) (IF: 2.5; SCI ranking: 54%)
[42] T.-R. Kuo, H.-J. Liao, Y.-T. Chen, C.-Y. Wei, C.-C. Chang, Y.-C. Chen, Y.-H. Chang, J.-C. Lin, Y.-C. Lee, C.-Y. Wen, S.-S. Li*, K.-H. Lin*, and D.-Y. Wang*, 2018, “Extended visible to near-infrared harvesting of earth-abundant FeS $_2$ -TiO $_2$ heterostructures for highly active photocatalytic hydrogen evolution”, GREEN CHEMISTRY, 20, 1640-1647. (SCIE) (IF: 9.2; SCI ranking: 14.9%,25.5%)
[43] Y.-T. Chen, C.-Y. Yang, P.-C. Chen, J.-K. Sheu, and K.-H. Lin*, 2017, “Carrier dynamics of Mn-induced states in GaN thin films”, SCIENTIFIC REPORTS, 7, 5788. (SCIE) (IF: 3.9; SCI ranking: 29.7%)
[44] Fan J. W., Y.-H. Yeh, J.-K. Sheu, and K.-H. Lin*, 2016, “THz acoustic spectroscopy by using double quantum wells and ultrafast optical spectroscopy”, Scientific Reports, 6, 28577. (SCIE) (IF: 3.9; SCI ranking: 29.7%)
[45] S.-K. Hung*, K.-H. Lin, C.-C. Chen, C.-H. Chou, and Y.-C. Lin, 2016, “Total-internal-reflection-based photomask for large-area photolithography”, OPTICS AND LASER TECHNOLOGY, 79. (SCIE) (IF: 5; SCI ranking: 20.2%,24.2%)
[46] K.-H. Lin*, K.-J. Wang, C.-C. Chang, Y.-C. Wen, B. Lv, C.-W. Chu, and M.-K. Wu*, 2016, “Ultrafast dynamics of quasiparticles and coherent acoustic phonons in slightly underdoped (BaK)Fe $_2$ As $_2$ ”, Scientific Reports, 6, 25962. (SCIE) (IF: 3.9; SCI ranking: 29.7%)
[47] S.-W. Chu*, H.-Y. Wu, Y.-T. Huang, P.-T. Shen, H. Lee, R. Oketani, Y. Yonemaru, M. Yamanaka, S. Shoji, K.-H. Lin, C.-W. Chang, S. Kawata, and K. Fujita*, 2016, “Ultrasmall all-optical plasmonic switch and its application to superresolution imaging”, Scientific Reports, 6, 24293. (SCIE) (IF: 3.9; SCI ranking: 29.7%)
[48] B.-W. Huang, T.-K. Hsiao, K.-H. Lin, D.-W. Chiou, and C.-W. Chang*, 2015, “Length-dependent thermal transport and ballistic thermal conduction”, AIP Advances, 5, 053202. (SCIE) (IF: 1.4; SCI ranking: 84%,92.5%,78.9%)
[49] K.-H. Lin*, K.-J. Wang, C.-C. Chang, Y.-C. Wen, D.-H. Tsai, Y.-R. Wu, Y.-T. Hsieh, M.-J. Wang, B. Lv, P. C.-W. Chu, and M.-K. Wu*, 2014, “Observation of pseudogaplike feature above Tc in LiFeAs by ultrafast optical spectroscopy”, PHYSICAL REVIEW B, 90 (17), 174502. (SCIE) (IF: 3.7; SCI ranking: 46.1%,34.8%,38.8%)
[50] C.-Y. Yang, C.-T. Chia, H.-Y. Chen, S. Gwo, and K.-H. Lin*, 2014, “Ultrafast Carrier Dynamics in GaN nanorods”, APPLIED PHYSICS LETTERS, 105 (21), 212105. (SCIE) (IF: 3.6; SCI ranking: 35.4%)
[51] K.-H. Lin*, S.-W. Weng, P.-W. Lyu, T.-R. Tsai, and W.-B. Su*, 2014, “Observation of optical second harmonic generation from suspended single-layer and bi-layer graphene”, APPLIED PHYSICS LETTERS, 105 (15), 151605. (SCIE) (IF: 3.6; SCI ranking: 35.4%)
[52] C.-H. Lu*, K.-H. Lin, Y.-Y. Hsu, K.-T. Tsen, Y.-S. Kuan*, 2014, “Inhibition of Escherichia coli respiratory enzymes by short visible femtosecond laser irradiation”, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 47(31), 315402. (SCIE) (IF: 3.2; SCI ranking: 37.9%)
[53] K.-H. Lin*, S.-C. Liou, W.-L. Chen, C.-L.-Wu, G.-R. Lin, Y.-M. Chang, 2013, “Tunable and Stable UV-NIR Photoluminescence from Annealed SiOx with Si Nanoparticles”, OPTICS EXPRESS, 21(20), 23416-23424. (SCIE) (IF: 3.3; SCI ranking: 34.3%)
[54] K.-H. Lin*, D.-H. Tsai, K.-J. Wang, S.-H. Chen, K.-L. Chi, J.-W. Shi, P.-C. Chen, J.-K. Sheu, 2013, “Acoustic spectroscopy for studies of vitreous silica up to 740 GHz”, AIP Advances, 3, 072126. (SCIE) (IF: 1.4; SCI ranking: 84%,92.5%,78.9%)
[55] C.-L. Chen, L.-R. Kuo, S.-Y. Lee, Y.-K. Hwu, S.-W. Chou, C.-C. Chen, F.-H. Chang, K.-H. Lin, D.-H. Tsai, and Y.-Y. Chen*, 2013, “Photothermal cancer therapy via femtosecond-laser-excited FePt nanoparticles”, BIOMATERIALS, 34 (4), 1128-1134. (SCIE) (IF: 12.9; SCI ranking: 4.1%,4.8%)
[56] Y.-S. Lin, K.-H. Lin, T. Tite, C.-Y. Chuang, Y.-M. Chang*, J. A. Yeh*, 2012, “Investigation of Nanopatterned c-plane Sapphire Substrates for Growths of Polar and Nonpolar GaN epilayers”, JOURNAL OF CRYSTAL GROWTH, 348 (1), 47-52. (SCIE) (IF: 2; SCI ranking: 57.7%,73.5%,69.6%)
[57] A. A. Maznev*, K. J. Manke, K.-H. Lin, K. A. Nelson, C.-K. Sun, J.-I. Chyi, 2012, “Broadband terahertz ultrasonic transducer based on a laser-driven piezoelectric semiconductor superlattice”, ULTRASONICS, 52(1), 1-4. (SCIE) (IF: 4.1; SCI ranking: 16.1%,21.3%)
[58] K.-H. Lin, C.-Y. Chuang, Y.-Y. Lee, F.-C. Li, Y.-M. Chang*, I.-P. Liu, S.-C. Chou, Y.-L. Lee*, 2012, “Charge transfer in the heterointerfaces of CdS/CdSe co-sensitized TiO2 photoelectrode”, Journal of Physical Chemistry C, 116 (1), 1550-1555. (SCIE) (IF: 3.2; SCI ranking: 50.9%,52.8%,65.4%)
[59] Y.-S. Lin, K.-H. Lin, Y.-M. Chang*, J. A. Yeh*, 2012, “Epitaxy of m-plane GaN on nanoscale patterned c-plane sapphire substrates”, SURFACE SCIENCE, 606 (1-2), L1-L4. (SCIE) (IF: 1.8; SCI ranking: 82.2%,70.1%)
[60] Y.-C. Wen, G.-W. Chern, K.-H. Lin, J. J. Yeh, C.-K. Sun*, 2011, “Femtosecond Optical Excitation of Coherent Acoustic Phonons in a Piezoelectric p-n Junction”, PHYSICAL REVIEW B, 84 (20), 205315. (SCIE) (IF: 3.7; SCI ranking: 46.1%,34.8%,38.8%)
[61] C. A. Werley, Q. Wu, K.-H. Lin, R. Tait, A. Dorn, M. Bawendi, and K. A. Nelson*, 2010, “Comparison of phase-sensitive imaging techniques for studying terahertz waves in structured LiNbO3 ”, JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 27(11), 2350-2359. (SCIE) (IF: 1.9; SCI ranking: 66.7%)
[62] E. R. Statz, K.-H. Lin, K. A. Nelson, M. Yang and K. J. Webb*, 2010, “Demonstration of terahertz frequency-dependent field transformation in an irregular waveguide structure with direct measurement of the internal electric fields”, OPTICS LETTERS, 35(17), 2931-2933. (SCIE) (IF: 3.3; SCI ranking: 34.3%)
[63] Y.-C. Wen, C.-L. Hsieh, K.-H. Lin, H.-P. Chen, S.-C. Chin, C.-L. Hsiao, Y.-T. Lin, C.-S. Chang, Y.-C. Chang, L.-W. Tu, C.-K. Sun*, 2009, “Specular scattering probability of acoustic phonons in atomically flat interfaces”, PHYSICAL REVIEW LETTERS, 103(26), 264301. (SCIE) (IF: 9; SCI ranking: 10.6%)
[64] K.-H. Lin*, C. A. Werley, K. A. Nelson*, 2009, “Generation of multicycle terahertz phonon-polariton waves in a planar waveguide by tilted optical pulse fronts”, APPLIED PHYSICS LETTERS, 95(10), 103304. (SCIE) (IF: 3.6; SCI ranking: 35.4%)
[65] Q. Wu*, C. A. Werley, K.-H. Lin, A. Dorn, M. Bawendi, K. A. Nelson*, 2009, “Quantitative phase contrast imaging of THz electric fields in a dielectric waveguide”, OPTICS EXPRESS, 17(11), 9219-9225. (SCIE) (IF: 3.3; SCI ranking: 34.3%)
[66] S.-P. Tai, Y. Wu, D.-B. Shieh, L.-J. Chen, K.-J. Lin, C.-H. Yu, S.-W. Chu, C.-H. Chang, X.-Y. Shi, Y.-C. Wen, K.-H. Lin, T.-M. Liu, C.-K. Sun*, 2007, “Molecular imaging of cancer cells using plasmon-resonant-enhanced third-harmonic-generation in silver nanoparticles”, ADVANCED MATERIALS, 19(24), 4520. (SCIE) (IF: 26.8; SCI ranking: 3.4%,2.5%,2.6%,3.7%,3.1%,4.5%)
[67] K.-H. Lin, C.-M. Lai, C.-C. Pan, J.-I. Chyi, J.-W. Shi, S.-Z. Sun, C.-F. Chang, C.-K. Sun*, 2007, “Spatial manipulation of nanoacoustic waves with nanoscale spot sizes”, Nature Nanotechnology, 2(11), 704-708. (SCIE) (IF: 35.1; SCI ranking: 2.3%,2.8%)
[68] Y.-C. Wen, L.-C. Chou, H.-H. Lin, V. Gusev, K.-H. Lin, C.-K. Sun*, 2007, “Efficient generation of coherent acoustic phonons in (111) InGaAs/GaAs multiple quantum wells through piezoelectric effects”, APPLIED PHYSICS LETTERS, 90(17), 172102. (SCIE) (IF: 3.6; SCI ranking: 35.4%)
[69] Y.-C. Wen, L.-C. Chou, H.-H. Lin, K.-H. Lin, T.-F. Kao, C.-K. Sun*, 2006, “Compositional Dependence of Longitudinal Sound Velocities of Piezoelectric (111) InxGa(1-x)As Measured by Picosecond Ultrasonics”, JOURNAL OF APPLIED PHYSICS, 100(10), 103516. (SCIE) (IF: 2.5; SCI ranking: 54%)
[70] K.-H. Lin, C.-F. Chang, C.-C. Pan, J.-I. Chyi, S. Keller, U. Mishra, S. P. DenBaars, C.-K. Sun*, 2006, “Characterizing the Phononic Bandgap Nano-Crystal with a Piezoelectric Single Quantum Well”, APPLIED PHYSICS LETTERS, 89(14), 143103. (SCIE) (IF: 3.6; SCI ranking: 35.4%)
[71] K.-H. Lin, C.-T. Yu, S.-Z. Sun, H.-P. Chen, C.-C. Pan, J.-I. Chyi, S.-W. Huang, P.-C. Li, C.-K. Sun*, 2006, “Two-Dimensional Nano-Ultrasonic Imaging by using Acoustic Nanowaves”, APPLIED PHYSICS LETTERS, 89(4), 043106. (SCIE) (IF: 3.6; SCI ranking: 35.4%)
[72] T.-H. Tsai, C.-Y. Lin, H.-J. Tsai, S.-Y. Chen, S.-P. Tai, K.-H. Lin, C.-K. Sun*, 2006, “Biomolecular imaging based on far-red fluorescent protein with a high two-photon excitation action cross section”, OPTICS LETTERS, 31(7), 930. (SCIE) (IF: 3.3; SCI ranking: 34.3%)
[73] C.-T. Yu, K.-H. Lin, C.-L. Hsieh, C.-C. Pan, J.-I. Chyi, C.-K. Sun*, 2005, “Generation of Frequency Tunable Nano-Acoustic-Waves by Optical Coherent Control”, APPLIED PHYSICS LETTERS, 87(9), 093114. (SCIE) (IF: 3.6; SCI ranking: 35.4%)
[74] K.-H. Lin, G.-W. Chern, C.-T. Yu, T.-M. Liu, C.-C. Pan, G.-T. Chen, J.-I. Chyi, S.-W. Huang, P.-C. Li, C.-K. Sun*, 2005, “Optical Piezoelectric Transducer for Nano-Ultrasonics”, IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 52(8), 1404-1414. (SCIE) (IF: 3.7; SCI ranking: 19.4%,38.7%)
[75] C.-K. Sun*, S.-Z. Sun, K.-H. Lin, K. Y. Zhang, H.-L. Liu, S.-C. Liu, and J.-J. Wu, 2005, “Ultrafast Carrier Dynamics in ZnO Nanorods”, APPLIED PHYSICS LETTERS, 87(2), 023106. (SCIE) (IF: 3.6; SCI ranking: 35.4%)
[76] K.-H. Lin, C.-T. Yu, Y.-C. Wen, C.-K. Sun*, 2005, “Efficient generation of picosecond acoustic pulses using a p-n junction with piezoelectric effects”, APPLIED PHYSICS LETTERS, 86(9), 093110. (SCIE) (IF: 3.6; SCI ranking: 35.4%)
[77] C.-L. Hsieh, K.-H. Lin, S.-B. Wu, C.-C. Pan, J.-I. Chyi, C.-K. Sun*, 2004, “Reflection property of nano-acoustic wave at air-GaN interface”, APPLIED PHYSICS LETTERS, 85(20), 4735-4737. (SCIE) (IF: 3.6; SCI ranking: 35.4%)
[78] K.-H. Lin, G.-W. Chern, Y.-K. Huang, C.-K. Sun*, 2004, “Terahertz electron distribution modulation in piezoelectric InxGa1-xN/GaN multiple quantum wells using coherent acoustic nanowaves”, PHYSICAL REVIEW B, 70(7), 073307. (SCIE) (IF: 3.7; SCI ranking: 46.1%,34.8%,38.8%)
[79] G.-W. Chern, K.-H. Lin, C.-K. Sun*, 2004, “Transmission of light through quantum heterostructures modulated by coherent acoustic phonons”, JOURNAL OF APPLIED PHYSICS, 95(3), 1114-1121. (SCIE) (IF: 2.5; SCI ranking: 54%)
[80] C.-K. Sun*, G.-W. Chern, K.-H. Lin, Y.-K. Huang, 2003, “Observation of large acoustic gain in coherent acoustic phonon oscillators”, CHINESE JOURNAL OF PHYSICS, 41(6), 643-651. (SCIE) (IF: 4.6; SCI ranking: 25.9%)
[81] K.-H. Lin, G.-W. Chern, Y.-C. Huang, S. Keller, S. P. DenBaars, C.-K. Sun*, 2003, “Observation of huge nonlinear absorption enhancement near exciton resonance in GaN”, APPLIED PHYSICS LETTERS, 83(15), 3087-3089. (SCIE) (IF: 3.6; SCI ranking: 35.4%)
[82] G.-W. Chern, K.-H. Lin, Y.-K. Huang, C.-K. Sun*, 2003, “Spectral Analysis of High Harmonic Coherent Acoustic Phonons in Piezoelectric Semiconductor Multiple Quantum Wells”, PHYSICAL REVIEW B, 67(12), 121303(R). (SCIE) (IF: 3.7; SCI ranking: 46.1%,34.8%,38.8%)
[83] T.-M. Liu, Y.-C. Huang, G.-W. Chern, K.-H. Lin, C.-J. Lee, Y.-C. Hung, C.-K. Sun*, 2002, “Characterization of Ultrashort Optical Pulses with Third-Harmonic-Generation Based Triple Autocorrelation”, IEEE JOURNAL OF QUANTUM ELECTRONICS, 38(11), 1529-1535. (SCIE) (IF: 2.1; SCI ranking: 62%,63.6%,65.8%,72.2%)
[84] K.-H. Lin, G.-W. Chern, S.-W. Chu, C.-K. Sun*, H. Xing, P. Kozodoy, S. Keller, U. Mishra, and S. P. DenBaars, 2002, “Ultrafast Hole Capture Dynamics in Mg-doped GaN Thin Films”, APPLIED PHYSICS LETTERS, 81(21), 3975-3977. (SCIE) (IF: 3.6; SCI ranking: 35.4%)
[85] T.-M. Liu, Y.-C. Huang, G.-W. Chern, K.-H. Lin, C.-J. Lee, Y.-C. Hung, C.-K. Sun*, 2002, “Triple Optical Autocorrelation for Direct Optical Pulse-Shape Measurement”, APPLIED PHYSICS LETTERS, 81(8), 1402-1404. (SCIE) (IF: 3.6; SCI ranking: 35.4%)
[86] Y.-C. Huang, G.-W. Chern, K.-H. Lin, J.-C. Liang, C.-K. Sun*, C.-C. Hsu, S. Keller, S. P. DenBaars, 2002, “Femtosecond Dynamics of Exciton Bleaching in Bulk GaN At Room Temperature”, APPLIED PHYSICS LETTERS, 81(1), 85-87. (SCIE) (IF: 3.6; SCI ranking: 35.4%)

學術會議(研討會)論文

[1] [Invited] K.-H. Lin*, Y.-T. Chen, and C.-Y. Yang, 2018, “What time-resolved optical spectroscopy can contribute to green technology?”, paper presented at Annual Meeting of the Physical Society of Taiwan, Taipei, Taiwan: National Taiwan University, 2018-01-24 ~ 2018-01-26.
[2] [Invited] K.-H. Lin*, 2016, “Ultrafast Phenomena in iron-based superconductors”, paper presented at The 9th Asian Conference on Ultrafast Phenomena (ACUP), Manila, Philippines: University of the Philippines Diliman, 2016-02-22 ~ 2016-02-24.
[3] [Invited] K.-H. Lin*, 2014, “THz acoustic spectroscopy based on GaN nanostructures”, paper presented at Ultrafast Phenomena and Nanophotonics XVIII, Photonics West, San Francisco, CA, USA: SPIE, 2014-02-01 ~ 2014-02-06.
[4] [Invited] K.-H. Lin, 2005, “Generation, Detection, and Propagation of Nano-acoustic waves in Piezoelectric Semiconductor”, paper presented at Ultrafast Phenomena in Semiconductors IX, Photonics West, San Jose, CA, USA: SPIE, 2005-01-22 ~ 2005-01-27.

發現與突破

[1] 西元年：2025
研究人員(中)：林宮玄
研究人員(英)：LIN, KUNG-HSUAN
研究成果名稱(中)：凡德瓦材料之激子非等向性屏蔽
研究成果名稱(英)：Anisotropic screening of excitons in van der Waals materials
簡要記述(中)：本所林宮玄博士等人與南加州大學、淡江大學理論團隊報導凡德瓦材料之激子有非等向性屏蔽效應。光載子增加時，光極化方向垂直與平行材料平面所量測到的激子能量位移不同。
簡要記述(英)：Dr. Kung-Hsuan Lin and colleagues at our institute, in collaboration with theoretical groups at the University of Southern California and Tamkang University, have reported that exciton screening in van der Waals materials is anisotropic. As the photocarrier density increases, the energy shift of excitons—probed using in-plane and out-of-plane polarized light—exhibits distinct differences.

主要相關著作：

T.-H. Wu, C.-E. Hsu, R. K. Ulaganathan, R. Sankar, Z. Li, C.-C. Lee, C.-S. Chang, and K.-H. Lin*, 2025, “Anisotropic screening of excitons in van der Waals materials”, NPJ 2D MATERIALS AND APPLICATIONS, 9, 37. (SCIE) (IF: 8.8; SCI ranking: 15.2%,23.4%,13.7%)

[2] 西元年：2025
研究人員(中)：林宮玄
研究人員(英)：LIN, KUNG-HSUAN
研究成果名稱(中)：鐵電硒化錫可產生超大光學二倍頻
研究成果名稱(英)：Giant second harmonic generation from ferroelectric SnSe
簡要記述(中)：本所林宮玄博士團隊跟美國麻省理工學院、中研院應科中心、淡江大學、臺灣大學團隊合作，報導鐵電堆疊之少層硒化錫的光學二倍頻轉換效率是傳統非線性晶體高三個數量級。二倍頻產生效率為非等向性，且與激發雷射波長有關。這個工作被 Advanced Photonics Research 2025年10月號選為封底故事。
簡要記述(英)：Kung-Hsuan Lin’s group at our institute, in collaboration with the groups at Massachusetts Institute of Technology, National Taiwan University, Research Center of Applied Sciences Academia Sinica, and Tamkang University reported that few-layer SnSe with ferroelectric stacking exhibits second harmonic generation (SHG) efficiencies up to three orders of magnitude higher than conventional nonlinear crystals. The SHG response is highly anisotropic and strongly dependent on the excitation wavelength. This work is highlighted as the back cover of Advanced Photonics Research (Oct. 2025).

主要相關著作：

L.-T. Huang, R. Moqbel, C. Chen, M.-H. Lee, C.-C. Lee, N. Mao, T. Zhang, Y. Zhu, J. Kong, and K.-H. Lin*, 2025, “Anisotropy of second harmonic generation in SnSe flakes with ferroelectric stacking”, Advanced Photonics Research, 6, 2500033. (SCIE)

[3] 西元年：2025
研究人員(中)：林宮玄
研究人員(英)：LIN, KUNG-HSUAN
研究成果名稱(中)：調控二氧化釩相變改變光響應
研究成果名稱(英)：Control of photoresponses in vanadium dioxide through phase manipulation
簡要記述(中)：本所林宮玄博士及鄭皓宇同學跟清華大學、中研院應科中心、陽明交通大學、臺灣大學團隊合作，報導二氧化釩在已知的高溫金屬相及低溫絕緣相間，有兩種新的光暫態響應相。藉由改變溫度或是雷射光亮度，光響應時間可在幾十皮秒到幾奈秒間調控，光響應強度在攝氏68度附近可增強 5.5倍。本工作內容被SPEC科學推展中心報導並收錄在研究亮點。
簡要記述(英)：Dr. Kung-Hsuan Lin and Hao-Yu Cheng at our institute, in collaboration with the groups at National Tsing Hua University, Research Center of Applied Sciences Academia Sinica, National Yang Ming Chiao Tung University and National Taiwan University, reported that there are two additional phases in transient photoresponses of vanadium dioxide between the insulating phase at low-temperature and metallic phase at high-temperature. By changing the temperature or laser power, the relaxation time can be manipulated from a few tens of picoseconds to a few nanoseconds. The amplitude of the photoresponse is 5.5 fold enhanced at 68 degrees Celsius. This work was reported by Science Promotion and Engagement Center (SPEC) as research highlight.

主要相關著作：

H-Y. Cheng, M.-J. Ye, L.-H. Chen, Y.-Y. Wang, S.-W. Chu, Y.-L. Huang, Y.-J. Lu, K.-P. Chen, and K.-H. Lin*, 2025, “Dynamic control of photoresponse in VO $_2$ through phase manipulation”, ADVANCED OPTICAL MATERIALS, 13, e01935. (SCIE) (IF: 7.2; SCI ranking: 21%,12.1%)

[4] 西元年：2024
研究人員(中)：林宮玄
研究人員(英)：LIN, KUNG-HSUAN
研究成果名稱(中)：鐵電堆疊單硫化錫發現超大光學二倍頻係數
研究成果名稱(英)：Giant Susceptibility of Optical Second Harmonic Generation in SnS with ferroelectric Stacking
簡要記述(中)：本所林宮玄博士及東京大學長汐晃輔教授領導團隊，報導鐵電堆疊硫化錫發具有超大二階非線性，其光學二倍頻係數是一般硫化錫薄膜及傳統非線性晶體的幾百倍。本研究也報導單域與多域硫化錫的二倍頻光學異向性。本工作已發表在 Advanced Optical Materials。
簡要記述(英)：Dr. Kung-Hsuan Lin at IoPAS and Prof. Kosuke Nagashio at Tokyo University led groups to report giant second-order nonlinearity of SnS with ferroelectric stacking. Its second harmonic generation (SHG) susceptibility is at least two order magnitude higher than the values of typical SnS thin films and traditional nonlinear crystals. The SHG anisotropy of single-domain and multi-domain SnS flakes is also systematically investigated. This work has been published in Advanced Optical Materials.

主要相關著作：

R. Moqbel, R. Nanae, S. Kitamura, M.-H. Lee, Y.-W. Lan, C.-C. Lee, K. Nagashio*, and K.-H. Lin*, 2024, “Giant Second-order Nonlinearity and Anisotropy of Large-sized Few-layer SnS with Ferroelectric Stacking”, ADVANCED OPTICAL MATERIALS, 12(19), 2400355. (SCIE) (IF: 7.2; SCI ranking: 21%,12.1%)

[5] 西元年：2023
研究人員(中)：林宮玄
研究人員(英)：LIN, KUNG-HSUAN
研究成果名稱(中)：硒化銦的層數與表面狀況對載子生命週期及遷移率扮演重要角色
研究成果名稱(英)：Layer number and surface condition of exfoliated InSe was found to play a vital role in the carrier lifetimes and mobilities
簡要記述(中)：本所林宮玄博士及張嘉升所長領導團隊研究硒化銦產生光載子下的超快現象。硒化銦表面在剛剝離及空氣氧化後的載子複合速率量測結果顯示：由於表面複合效應，當硒化銦層數愈少，則載子生命週期愈短且遷移率愈低。本工作發表在 Nanoscale (2023, Issue 7) 並為該期背封面故事。
簡要記述(英)：Dr. Kung-Hsuan Lin and Director Chia-Seng Chang at IoPAS led to investigate the ultrafast phenomena in exfoliated InSe. The layer dependence on carrier recombination rate in freshly exfoliated and air-oxidized InSe indicates that the thickness and surface condition should play an important role to the performance of devices based on few-layer InSe. The carrier lifetime or mobility decreases with decreasing thickness due to the surface recombination. This work was published in Nanoscale (2023, Issue 7) and featured in its back cover.

主要相關著作：

T.-H. Wu, H.-Y. Cheng, W.-C. Lai, R. Sankar, C.-S. Chang*, and K.-H. Lin*, 2023, “Ultrafast Carrier Dynamics and Layer-Dependent Carrier Recombination Rate in InSe”, NANOSCALE, 15(7), 3169-3176. (SCIE) (IF: 5.1; SCI ranking: 30.3%,32.1%,41.1%,22.4%)

[6] 西元年：2023
研究人員(中)：林宮玄
研究人員(英)：LIN, KUNG-HSUAN
研究成果名稱(中)：惠更斯超穎吸收材料之大幅度光調制
研究成果名稱(英)：Large Optical Modulation of Dielectric Huygens’ Metasurface Absorber
簡要記述(中)：本所林宮玄博士及清大陳國平教授領導團隊，以理論與實驗方式演示惠更斯超穎吸收材料的光調制幅度可增強兩個數量級。在數微米見方及超快皮秒尺度下，實驗演示非晶矽的惠更斯超穎吸收材料可達到 100% 光調制幅度，可應用在全光學調制。本工作發表在 Advanced Optical Materials (2023, Issue 10) 並為該期內封面故事。
簡要記述(英)：Dr. Kung-Hsuan Lin at IoPAS and Prof. Kuo-Ping Chen at NTHU led groups to demonstrate both theoretically and experimentally that modulation depth is enhanced by two orders of magnitude in Huygens' metasurface absorber where electric dipole lattice resonance matches the magnetic dipole resonance. Within picosecond scale delay after ultrafast photoexcitation and a few square micrometer spatial confinement, over 100% photothermal modulation depth is experimentally achieved in Huygens' metasurface absorber based on amorphous silicon. These Mie-type optical resonators are applicable to all-optical modulation. This work was published in Advanced Optical Materials (2023, Issue 10) and featured in its inside front cover.

主要相關著作：

H.-Y. Cheng, M.-J. Ye, W.-R. Chen, C.-Y. Yang, S.-W. Chu, K.-P. Chen*, and K.-H. Lin*, 2023, “Large Optical Modulation of Dielectric Huygens’ Metasurface Absorber”, ADVANCED OPTICAL MATERIALS, 11(10), 2300102. (SCIE) (IF: 7.2; SCI ranking: 21%,12.1%)

[7] 西元年：2022
研究人員(中)：林宮玄
研究人員(英)：LIN, KUNG-HSUAN
研究成果名稱(中)：超快奈米矽光子研究獲 OPN 光學雜誌選為 2022 突破工作
研究成果名稱(英)：Studies of ultrafast silicon nanophotonics were selected as Optics in 2022 by the optics magazine OPN
簡要記述(中)：矽是半導體電子工業應用最廣泛的元素，因此矽光子學擁有與電子元件整合的優勢，其中光學控制是很重要的關鍵應用。臺大物理系朱士維教授與中研院物理所林宮玄博士團隊等人，利用超快雷射在不同時間，調控奈米矽非線性光學散射特性，可在線性、超線性與亞線性間輕易轉換。本工作發表在 Advanced Optical Materials (Volume 10, Issue 5, 2101711, 2022) 並為該期封面，也被美國光學協會Optica 出版的光學雜誌 OPN (2022，12月號) 選為 2022 突破工作。
簡要記述(英)：Silicon is the most widely applied element in semiconductor industry. Therefore, silicon photonics exhibits the advantage for integration with electronic devices. And optical control is an important key application. The groups of Prof. Shi-Wei Chu (Physics, National Taiwan University and Dr. Kung-Hsuan Lin (Institute of Physics, Academia Sinica) et al. utilized ultrafast laser to manipulate the features of nonlinear light scattering from nano-silicon at temporal domains. The linearity, super-linearity, and sub-linearity can be easily manipulated. This work was published and selected as the cover in Advanced Optical Materials (Volume 10, Issue 5, 2101711, 2022). It was also selected as Optics in 2022 in the magazine Optics & Photonics News (December 2022 issue).

主要相關著作：

G.-J. Huang, H.-Y. Cheng, Y.-L. Tang, H. Ikuto, J. Takahara, K.-H. Lin*, and S.-W. Chu*, 2022, “Transient super-/sub-linear nonlinearities in silicon nanostructures”, ADVANCED OPTICAL MATERIALS, 10 (5), 2101711. (SCIE) (IF: 7.2; SCI ranking: 21%,12.1%)

[8] 西元年：2020
研究人員(中)：林宮玄
研究人員(英)：LIN, KUNG-HSUAN
研究成果名稱(中)：發現單顆奈米矽具有超大非線性光學散射
研究成果名稱(英)：Observation of giant nonlinear light scattering from single silicon nanostructure
簡要記述(中)：矽是半導體電子工業應用最廣泛的元素，因此矽光子學擁有與電子元件整合的優勢，其中光學控制是很重要的關鍵應用。臺大物理系朱士維教授、日本大阪大學光子學中心Junichi Takahara 教授與中研院物理所林宮玄博士等人，發現單顆奈米矽長方體，可藉由光致熱效應，產生超大的非線性光學散射，且反應時間僅須奈秒等級。這個發現展示實現超快奈米全光學開關元件的潛力，也具有做出精度高達40奈米的遠場光學超解析顯微影像的應用。詳細討論可參考 Nature Communications Vol. 11, 4101 (2020).
簡要記述(英)：Silicon is the most widely applied element in semiconductor industry. Therefore, silicon photonics exhibits the advantage for integration with electronic devices. And optical control is an important key application. Prof. Shi-Wei Chu (Physics, National Taiwan University), Prof. Junichi Takahara (Photonics Center, Osaka University, Japan), and Dr. Kung-Hsuan Lin (Institute of Physics, Academia Sinica) et al. found giant nonlinear light scattering from single silicon nanoblock through photothermal effects and the response time was simply on the timescale of nanoseconds. This observation demonstrates the potential to realize all optical switch at nanometer scale, and the application to achieve far-field superresolution microscopy with resolution of 40 nm. Detailed discussions can be referred to Nature Communications Vol. 11, 4101 (2020).

主要相關著作：

Y.-S. Duh, Y. Nagasaki, Y.-L. Tang, P.-H. Wu, H.-Y. Cheng, T.-H. Yen, H.-X. Ding, K. Nishida, I. Hotta, J.-H. Yang, Y.-P. Lo, K.-P. Chen, K. Fujita, C.-W. Chang, K.-H. Lin*, J. Takahara*, and S.-W. Chu*, 2020, “Giant photothermal nonlinearity in single silicon nanostructure”, NATURE COMMUNICATIONS, 11, 4101. (SCIE) (IF: 15.7; SCI ranking: 10.8%)

[9] 西元年：2017
研究人員(中)：林宮玄
研究人員(英)：LIN, KUNG-HSUAN
研究成果名稱(中)：實驗得到電子動態時間，可幫助太陽能電池效率最佳化
研究成果名稱(英)：Experimentally obtained relaxation time of electrons can help to optimize the efficiency of solar cells
簡要記述(中)：太陽能電池材料的能隙，決定什麼波長的光可轉換為電子進而變電流，而單能隙材料使其理論轉換效率最多也只能到 40% 左右。有學者提出中間能帶 (Intermediate band) 太陽能電池的想法，利用中間能帶，使小於能隙的部分光能量也可轉換成電子，理論可達63%轉換效率，其中電子停留在中間能帶的時間資訊很重要。中研院物理所林宮玄博士團隊與成大光電系許進恭教授團隊，量測摻錳之氮化鎵 (Mn-doped GaN)裡，電子停留在錳相關中間能帶的時間。此重要資訊，可幫助中間能帶太陽能電池建立模型的時間參數，提供效率最佳化方向。詳細討論發表在 Scientific Reports Vol. 7, 5788 (2017).
簡要記述(英)：The bandgap of the material for a solar cell determines what wavelength of light can be converted to moving electrons (or currents). However, the conversion efficiency of single-material-based solar cell is at most 40% according to theoretical calculation. Researchers proposed that intermediate bands could increase the conversion efficiency up to 63% theoretically. The relaxation time of electrons in the intermediate bands is thus important for this design. Kung-Hsuan Lin's group in Institute of Physics, Academia Sinica and Prof. Jinn-Kong Sheu's group in Department of Photonics, National Cheng Kung University experimentally measured the relaxation time of electrons in the intermediate band of Mn-doped GaN. This important information can provide the time parameter of the theoretical model, which is helpful for optimization of the efficiency of solar cells. Detailed discussion can be found in Scientific Reports Vol. 7, 5788 (2017).

主要相關著作：

Y.-T. Chen, C.-Y. Yang, P.-C. Chen, J.-K. Sheu, and K.-H. Lin*, 2017, “Carrier dynamics of Mn-induced states in GaN thin films”, SCIENTIFIC REPORTS, 7, 5788. (SCIE) (IF: 3.9; SCI ranking: 29.7%)

林宮玄 / 研究技師

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