最近更新: 2015年1月21日

 

An SEM image of a single electron transistor. The source and drain electrodes are bridged by C60-Au- C60 nano-particles. The gate electrode is not shown. The inset shows the suspended Au leads before attachment of Au particles. The width of the electrodes is about 160 nm, and the gap between the two tips is about 15 nm. The scale bar is 100 nm. [Applied Physics Letters, 81, 4595 (2002)]

 

 

Two-dimensional arrays of high refractive index structures can be fabricated using a combination of e- beam lithography for pattern definition and electrochemical deposition for structure formation. The potential of this method is demonstrated for CdSe, where (a) mushrooms, (b) nanopillars, (c) walls, and (d) crosses are prepared. Such arrays have potential in optical device applications such as photonic crystals and waveguides. [Advanced Materials, 15, 49 (2003)]

 

Suspended AuPd wires made by standard e-beam lithography and etching techniques. The inset is a blowup view of one of the wires. The scale bar is 1 micron.

 

AFM image of a Co-Al-Co single electron device. Because of a two-angle evaporation technique used for fabrication of the samples, there are redundant, electrically unconnected structures aside the measured device. [Phys. Rev. Lett., 88, 047004, (2002)]

 

 

 

The SEM image of an 1-dimensional Josephson junction array. Shown in the inset is an AFM image of 3 cells of the devices. The overlapping areas between “I”-shaped islands are the tunnel junctions. The array has a length of 100 cells. The scale bar at the bottom of the image is 1 mm. [Phys. Rev. Lett., 87, 186804, (2001); Phys. Rev. B, 74, 184522 (2006); Phys. Rev. B, 75, 014517 (2007)]

 

An AFM image showing l-DNA across Au-electrodes. The height of the electrodes is 40nm.

 

 

 

 

 

SEM images of Au-nanoparticle single-line patterns. The four writings of "DNA" in (a) were made utilizing different e-beam exposure line doses. [Advanced Functional Materials]

 

Gold nano-particle pattern produced by utilizing DNA molecular layer as an e-beam sensitive reagent. In this approach, thiolated single-strand DNA was bombarded using a focused electron beam, resulting in the inhibition of hybridization to complementary strands, and then gold nano-particles were used as markers to reveal nano-scaled patterns. This technique has potential applications in the fabrication of DNA-based nano-structures. [ Advanced Materials 18, pp1517-1520 (2006) ]

SEM image of a couple-s sample. The junctions areas are marked by white parallelograms and the two control gates are located outside the image. [New Journal of Physics, 8, 300 (2006) ]

SEM images of a single electron transistor made on the device layer of Silicon-On-Insulator (SOI) wafers. The device contains a big island connected to leads via small quantum dots present in the nano-constrictions. [Applied Physics Letters, 90, 032106 (2007)]

SEM images of multi-layer line-array structures made of electron-beam sensitive polymers. These structure can serve as 3D photonic crystals (upper-left image) and quasi-3D suspending slab photonic crystals (lower-right image). The structures were fabricated by e-beam lithography with single- step 100keV-exposure, and multiple-development steps.

 

An SEM image of one of the measured MWNTs. The tube was grown from an iron catalyst (not shown in this image) and was connected to 9 Cr-electrodes. [Applied Physics Letters, 84, 984, (2004)]

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