Research Highlights

Quantum Materials        Graphene-based Electronics        Unconventional Nanofabrication Technique


     Armed with a state-of-art dilution fridge system, we are capable of performing transport measurement in extreme conditions at temperature as low as 15 mK and magnetic field up to 17 Tesla where new phenomena and new physics can be revealed. The systems currently under investigation are complex oxide systems, strongly correlated electronic systems, topological insulator...etc.

“ Nonlinear and nonreciprocal transport effects in untwinned thin films of ferromagnetic Weyl metal SrRuO3”, Phys. Rev. X 14, 011022(2024).

Revealing topological surface states via nonlinear and nonreciprocal transport effects: One of the challenging subjects in topological systems is to identify the charge transport signatures associated with the unusual surface states due to nontrivial band topology. In a recent international collaborating work led by Dr. Wei-Li Lee and Prof. Guang-Yu Guo, an unusual large nonreciprocal and nonlinear charge transport effects (NRTE) in both longitudinal and transverse channels were observed in thin films of topological ferromagnetic Weyl metal SrRuO3 (SRO). These behaviors align with a proposed scenario of an effective Berry curvature dipole originating from Fermi-arc surface states accompanied by 1D chiral edge modes, which is supported by electronic band structure calculations. Our findings not only highlight the significance of NRTE as a charge transport probe for topological surface states with a broken inversion symmetry but also feature potential applications in nonreciprocal electronics and nonlinear optics using topological materials. The complete data and analyses have been recently accepted for publication at Physical Review X. Uddipta kar, Elisha Lu, Akhilesh Singh and P.V. Sreenivasa Reddy are the co-first authors. The SRO thin film growth, device fabrication and transport measurements were carried out by Dr. Wei-Li Lee’s group at IoPAS and Prof. I-Chun Cheng’s group at NTU. The electronic band structure calculations were performed by Prof. Guan-Yu Guo’s group at NTU and Prof. Wei-Cheng Lee’s group at SUNY Binghamton. The optical SHG measurements were performed by Prof. David Hsieh’s group at Caltech. The SRO thin film structural characterizations were performed by Director Chia-Hung Hsu’s group at NSRRC.

“The thickness dependence of quantum oscillations in ferromagnetic Weyl metal SrRuO3”, npj Quantum Materials 8, 8(2023).

(Blog)

A glimpse of Weyl-orbit quantum oscillations in Weyl metal SrRuO3: In a topological Weyl semimetal, the correspondence between bulk Weyl nodes and surface Fermi-arc states gives rise to a unique nonlocal cyclotron motion via the electron tunnelings between the top and bottom Fermi-arc surface states, which was referred to as the Weyl-orbit effect exhibiting an unusual thickness dependent quantum oscillations. In an international collaboration led by Dr. Wei-Li Lee’s group, such an unusual thickness dependent Weyl-orbit quantum oscillation was demonstrated in untwinned Weyl metal thin films of SrRuO3 grown by oxide molecular beam epitaxy facility at IoPAS. The quantum oscillations measurements with field up to 35 T were carried out at EMFL-Nijmegen in Netherlands in collaboration with Prof. Steffen Wiedmann’s group, and the rigorous band calculations were done by Prof. Wei-Cheng Lee’s group at SUNY Binghamton in USA. The high precision X-ray characterizations were performed at the NSRRC, Hsinchu in Taiwan in collaboration with Director Chia-Hung Hsu‘s group. The complete data and analyses have been recently published online at npj Quantum Materials (https://rdcu.be/c31ub). Uddipta Kar and Dr. Akhilesh Singh are the first two authors with equal contributions and responsible for the quantum oscillation data analyses and also the growths and structural characterizations of the SrRuO3 thin films.

“Field-induced resistance peak in a superconducting niobium thin film proximity coupled to a surface reconstructed SrTiO3”, npj Quantum Materials 5, 45(2020).

Revelation of the exotic electronic states in surface-reconstructed SrTiO3: Oxygen vacancies (OVs) on the surface of a wide band-gap SrTiO3 (STO) were known to induce surface reconstructions (SR), which not only resulted in electron dopings but also was theoretically predicted to show magnetism with unusual spin-polarized in-gap states. Experimental confirmations for those exotic states are hampered by the difficulty of maintaining such surface structures under ambient conditions. In a recent collaborating work led by Dr. Wei-Li Lee at IoPAS and Prof. Wei-Cheng Lee at Binghamton University SUNY, such exotic electronic states in SR-STO were revealed by proximity coupling a superconductor (SC), serving as a probe and also a protection layer, to a SR-STO. Dr. Akhilesh Singh and Uddipta Kar, who are the first and the second authors of the paper, utilized the interconnected multi-UHV chambers facility at IoPAS. The SR-STO was prepared and characterized via electron diffraction under UHV followed by UHV deposition of superconducting niobium (Nb) thin films to ensure a clean interface between SC and SR-STO. An unusual and generic field-induced peak resistance effect was uncovered for the first time in such a hybrid SC/SR-STO system. Combining magnetization measurements and also detailed DFT calculations, we proposed a model based on the interface resistance between a SC and a highly spin-polarized metal that gives a self-consistent explanation to the observed field-induced peak resistance effect. Our results strongly support for the existence of spin-polarized in-gap states in SR-STO.

 

“Determination of spin-orbit scattering lifetime at the interface of LaAlO3/SrTiO3 from the superconducting upper critical fields”, Phys. Rev. Research 2, 013311 (2020).

Electronic phase separation for the interface superconductivity in LaAlO3/SrTiO3: The formation of Cooper pairs can be more favorable for electrons from certain orbitals, giving rise to an unusual state with the coexistence of normal fluid and superfluid. Such a phase is likely to happen for the interface superconductivity in LaAlO3/SrTiO3. The orbital nature of an electron largely affects its spin-orbit interaction, which can be determined independently either from the weak-localization model in normal state or from the upper critical fields in superconducting state. We have developed a practical scheme to extract spin-orbit parameters from upper critical fields for low transition temperature superconducting systems with strong spinorbit coupling. A striking discrepancy in the extracted spin-orbit coupling parameters was uncovered for the first time in high quality LaAlO3/SrTiO3 samples grown by oxide molecular beam epitaxy technique, indicating a difference in the spin-relaxation mechanism for the charge transport above and below the superconducting transition temperature. Such a finding supports for a possible orbital selectivity for the Cooper pairing and thus an electronic phase separation at the interface of LaAlO3/SrTiO3 that may shed some lights toward understanding the exotic low-density superconductivity.

"Influence of SrTiO3 capping layer on the charge transport at the interfaces of SrTiO3/LaAlO3/SrTiO3 (100) heterostructure", Phys. Rev. Materials 2, 114009 (2018).

The existence of quasi-two-dimensional hole gas at complex oxide interface: A number of discoveries have been made for the quasi-two-dimensional electron gas (q2DEG) at the complex oxide interface systems, but the possibility of a quasi-two-dimensional hole gas (q2DHG) at complex oxide interface and its experimental confirmation remain debatable.High quality ultra-thin epitaxial oxide films were grown and characterized by an oxide molecular beam epitaxy facility at IoP. Electric gated devices based on SrTiO3(6-uc)/LaAlO3(5-uc)/SrTiO3 (100) were then fabricated to further tune the interface conducting channels. From complete low-temperature magneto-transport measurements with a gate voltage tuning, the data were analyzed and fitted rigorously using the two-band transport model, which confirms the existence of such a q2DHG at oxide interface. The existence of both electrons and holes has enriched the functionality for semiconductor-based devices in the past. The existence of q2DHG at complex oxide interface not only largely extends the scope for complex oxide electronics but also provides a new platform for exploring new fundamental physical phenomena in matter.

"Scale-Invariant Quantum Anomalous Hall Effect in Magnetic Topological Insulators beyond the Two-Dimensional Limit", Phys. Rev. Lett. 113, 137201 (2014).

Demonstration of robust quantum anomalous Hall effect (QAHE) in macroscopic and 3D ferromagnetic topological insulator system: Anomalous Hall effect refers to the phenomenon of linear proportionality between the anomalous Hall resistance and its magnetic moment in a magnetic system. In normal magnetic metal and semiconductor,  there is no universal value for the anomalous Hall resistance. Nevertheless, in a ferromagnetic topological insulator (FM TI) under zero external magnetic field, the Dirac surface states, originating from the non-trivial bulk band topology,  attain different effective masses on different surfaces. This results in a dissipationless chiral edge channel forming at the Dirac fermion mass domain-wall and gives rise to the quantization of the anomalous Hall resistance.This effect was now further demonstrated in a macroscopic and 3D FM TI. This may provide a new direction for resolving the heat dissipation problem in electronics using dissipationless chiral edge channel in a topological material.

 

    Graphene comprises a single atomic layer of carbon sheet. In its honeycomb lattice structure, electron loses all its mass traveling at a speed of 300 times smaller than c (the speed of light) obeying Dirac equation. Even though electron becomes massive in a bi-layer graphene, the chiral fermionic excitations remain present in both single-layer and bi-layer graphene. There are two well-defined values of "chirality"(projection of pseudo-spin state on the propagation direction) resembling the "helicity" in particle physics but not only being limited to massless particles. Many novel transport phenomena have been reported, where the chiral fermionic property plays an important role. In addition, graphene-based electronics may be a promising candidate for the next generation electronics.            

    We have developed a scheme to prepare micron-sized few-layer graphene crystals. We are working on several other graphene-based device to further explore the special transport phenomena resulting from the chiral fermions.                   

“Full electric field tuning of the nonreciprocal and nonlinear charge transport in massive chiral Fermions with trigonal warping”, Physical Review Research 3, 033160 (2021).

Full electric field tuning of the nonreciprocal and nonlinear charge transport in massive chiral Fermions with trigonal warping: Recently, there are a number of interests for the non-reciprocal transport effect (NRTE) in non-centrosymmetric systems that may realize an intriguing possibility of current rectification via a single-phase material. Most of the reported single-phase systems with NRTE require a finite external magnetic field owing to the magneto-electric anisotropy term in the form of kE×B. Here, a full electric-field tuning of NRTE in dual-gated bilayer graphene (BLG) device was demonstrated in the absence of magnetic field, which originates from the unique massive chiral fermions with trigonal warping in a gapped BLG. The magnitude of NRTE is at maximum when the Fermi surface undergoes a Lifshitz transition near the band edges. Our findings may open up a new direction for the emerging fields of “valleytronics” and “twistronics”.

"Enhanced Thermoelectric Power in Dual-Gated Bilayer Graphene", Phys. Rev. Lett. 107, 186602 (2011).

Enhanced Thermoelectric Power in Dual-Gated Bilayer Graphene: The “field-effect thermoelectricity” is demonstrated for the first time in experiment. When applying a perpendicular electric field (D) on a bilayer graphene, the thermoelectric power (TEP) can be amplified more than 4 folds while the carrier density remains the same. The value of TEP is comparable to or exceeding several known low temperature thermoelectric materials. The physical mechanism is rooted in the band-gap opening due to the inversion symmetry breaking by D, which largely increases the band curvature near the band edges. On the other hand, its polarity can be readily tuned by the gate voltage to be either electron-type or hole-type. Our results open up a new possibility in thermoelectric application using graphene-based device.

 

    

    In conventional nanofabrication tools, resist and chemicals are needed and may degrade the quality of deposited thin film. We, therefore, intend to develop a technique for resist-free fabrication of nano-device such that the quality of thin films and also interfaces can be improved. This would be important for the study in spin-electronics devices.    

     We have developed a technique to fabricate large area periodic nanostructured system at lower cost and better time efficiency. We utilized a special polymer bridging effect to prepare large area (more than 1 cm x 1 cm) monolayer of close-packed polystyrene nanospheres with various diameter ranging from 100 nm to 1um. It can then be used as a template to fabricate large area nanostructured system. From a series of cobalt antidot thin film samples prepared by this technique, we found an interesting crossover behavior in the magnitization reversal when tuning the antidot diameters. In addition, we also uncovered that the effective moment per cobalt atom is marching down as the surface to bulk volume fraction increases.

    

"Evidence for enhanced phase fluctuations in nanostructured niobium thin films", Phys. Rev. B 96, 020506(R) (2018).

Enhanced superconducting phase fluctuation via artificial nanostructure engineering: In a conventional superconductor, a large Cooper pair density gives rise to a extremely stiff phase rigidity, thus obscuring the rich phenomena associated with phase fluctuations. The phase rigidity in superconducting niobium (Nb) films can be effectively reduced by imposing well-ordered anti-dots, forming a interconnected Nb honeycomb lattice (INHL). By using a special technique we developed previously, the first author, Ms. Ting-Hui Chen, succeeded in fabricating a remarkable series of INHLs with sub-100nm nanostructures extending over 108 cells and up to few millimeters in size, where an unusual superconducting transition width narrowing in fields was observed for the first time in superconducting systems. The broadened transition width in zero field is a direct consequence of the enhanced phase fluctuations due to the intriguing interplay between the phase slips and flux-line lattice. Our works demonstrate the feasibility of reducing the phase rigidity in a superconductor via artificial nanostructure engineering.

More highlights: Fabrication of monolayer polymer/nanosphere hybrid at a water-air interface 

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