2025/08/07(Thu) 10:30 -12:00 五樓第一會議室 5F, 1st Meeting Room
Title
In-plane anomalous Hall effect in Eu-based Zintl thin films
Speaker
李湘小姐 (Department of Physics, Institute of Science Tokyo) Ms. Hsiang Lee (Department of Physics, Institute of Science Tokyo)Abstract
The in-plane anomalous Hall effect (iAHE) has recently emerged as a signature of orbital magnetization in magnetic topological materials. A key example is the magnetic Weyl semimetal EuCd2Sb2, where the iAHE arises from out-of-plane orbital magnetization induced by an in-plane magnetic field [1,2]. This discovery has brought new attention to how Berry curvature and orbital effects shape transport in systems with broken time-reversal and crystalline symmetries.
Our group has studied a series of Eu-based compounds, including EuCd2Sb2, EuCd2As2 [3], and EuZn2Sb2. We have fabricated high-quality thin films of EuZn2Sb2 for the first time and observed a distinct iAHE with a threefold angular symmetry in the (001) plane. This response is different from the twofold symmetry of the planar Hall effect and contrasts with EuCd2Sb2 in both sign and field dependence.
These differences are reproduced by model calculations with varying band inversion strength, demonstrating how orbital magnetization and iAHE can be tuned through band structure engineering. This work establishes EuZn2Sb2 thin films as a new platform for studying orbital-driven transport and marks the first observation of iAHE from orbital magnetization beyond EuCd2Sb2 [4].
References:
[1] M. Ohno, et al., Physical Review B 105, L201101 (2022).
[2] A. Nakamura, et al., Physical Review Letters 133, 236602 (2024).
[3] S. Nishihaya, et al., Applied Physics Letters 124 (2024).
[4] H. Lee, et al., Physical Review B 111, L241106 (2025).
Language
演講語言 (Language): in English