2021/11/25(Thu)
10:30 -12:00
五樓第一會議室 5F, 1st Meeting Room
視訊演講 Video Seminar [ Meeting Link / ID: 2511 258 9880 / Password: 123456 ]
Title
From spin-transfer torque to spin-orbit torque MRAM
Speaker
白奇峰副教授 (國立臺灣大學材料科學與工程學系暨研究所) Associate Prof. Chi-Feng Pai (Department of Materials Science and Engineering, National Taiwan University)Abstract
The second generation magnetoresistive random access memory (MRAM), which employs the physics of spin-transfer torque (STT) and the nature of spin angular momentum of itinerant electrons, is now in mass production by major foundries such as TSMC and Samsung. In this talk, I will go through the basics of spin transfer torque and how it led to the second renaissance of spintronics as well as the invention of STT-MRAM. The physics and the engineering perspectives of future spintronic devices that utilize the spin-orbit torques (SOTs) will be introduced. Some recent results on the low-symmetry materials systems that can generate unconventional spin currents will also be discussed.
Language
演講語言 (Language): in English