Recent Research

High ZT and its origin in Ge0.92Sb0.08Te single crystals

Post Date:2020-12-02

The teamed up researchers Dr. Yang-Yuan Chen, Dr. Cheng-Lung Chen, Dr. Min-Nan Ou from the Institute of Physics, Academia Sinica, Taiwan, and Professor Apparao M Rao from Clemson University, USA has successfully worked on synthesizing of GeTe-based single crystal as well as the study of its thermoelectric properties. The team systematically investigated the effects of Sb doping on GeTe crystals, and enhanced the thermoelectric figure-of-merit ZT of Ge0.92Sb0.08Te single crystal to "2.2". According to the observed nanoscale defect structures, neutron scattering experiments, density functional theory calculations, and Raman spectroscopy measurements, some abnormal phonon scattering mechanisms have been discovered. This research provides a new perspective to explore emerging high ZT thermoelectric materials. The complete work has been published recently on Advanced Science, Vol. 7, 2002494 (2020). Meanwhile, the representative figures are also selected as the cover story of the current issue.

https://www.phys.sinica.edu.tw/files/bpic20201202101001am_未命名-1(內容用).png

WebSite: https://onlinelibrary.wiley.com/doi/full/10.1002/advs.202002494

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