Enormous Berry-Curvature-Based Anomalous Hall Effect (AHE) in Topological Insulator (Bi,Sb)2Te3 on Ferrimagnetic Europium Iron Garnet beyond 400K
Post Date:2022-02-23
Dr. Shang-Fan Lee in collaboration with Prof. Raynien Kwo (NTHU) et al has discovered the Enormous Berry-Curvature-Based Anomalous Hall Effect (AHE) in Topological Insulator (Bi,Sb)2Te3 on Ferrimagnetic Europium Iron Garnet beyond 400 K. The AHE is due to the magnetic proximity effect destroying the time reversal symmetry of the electron states at the surface. The experimental data agrees well with the first principle calculations, indicating the results are due to intrinsic properties of the high quality samples. Results are published in ACS Nano 2022, 16, 2369−2380.
