Single-crystalline materials: growth strategies, challenges, and prospects for futuristic semiconductors
Dr. Raman Sankar (Institute of Physics, Academia Sinica) and Prof. Phuong V. Pham (Department of Physics, National Sun Yat-sen University,) his group investigate the rapid development of two-dimensional (2D) single-crystalline materials is transforming materials science, with significant implications for next-generation semiconductors, optoelectronics, and quantum computing. This review highlights recent advances in the synthesis and characterization of key 2D materials such as graphene, hexagonal boron nitride, and transition metal dichalcogenides. It focuses on novel growth methods—including chemical vapor deposition, molecular beam epitaxy, and contact-free annealing—emphasizing the production of large-area (111)-oriented single crystals. The importance of highly ordered metal substrates like copper, cobalt, nickel, platinum, and palladium for epitaxial growth is also discussed. These materials demonstrate outstanding charge carrier mobility, thermal conductivity, and tunable electronic properties, making them ideal for flexible electronics, high-performance sensors, and AI-related hardware. The review further outlines the primary challenges in large-scale synthesis, defect control, and integration with existing semiconductor platforms. Finally, it offers a forward-looking roadmap for translating 2D single-crystal research into industrial-scale technologies, providing a valuable perspective on scalable synthesis strategies and practical applications. This review stands out by combining technical depth with a focus on real-world relevance, positioning 2D single-crystalline materials at the forefront of modern electronic innovation.
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期刊連結: https://doi.org/10.1016/j.mattod.2025.08.036