Engineering high-performance IR photodetectors: From material design to multifunctional applications
Dr. Raman Sankar and his group investigate Infrared photodetectors (IR PDs) are vital components in optoelectronics, facilitating a wide range of applications, including security systems, search and rescue missions, biomedical diagnostics, meteorological observations, and astronomical studies. Despite their versatility, the performance of IR PDs is hindered by several challenges, such as scattering effects, high surface and interface contact resistance, dark current, limited photo responsivity, low sensitivity, and suboptimal noise equivalent power. These limitations are primarily attributed to the inherent properties of the semiconductor materials used in their construction, including abundant defect states, thermal instability, large bandgap widths, and the zero-bandgap nature of graphene. This review provides a comprehensive overview of recent advancements in IR PD technology, focusing on strategies to overcome these performance bottlenecks. Innovative approaches include the use of novel low-dimensional materials, the development of advanced device architectures, and the application of direct-growth techniques for 2D heterostructure These methods aim to mitigate the physical and material constraints that currently restrict device their importance in various fields. The discussion extends to future prospects, emphasizing the potential of IR PDs to achieve higher performance and broader applicability. However, it also addresses the existing challenges that must be resolved to realize these goals. This analysis underscores the critical role of IR PDs in modern technology and the continuous need for research to push their boundaries further.
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期刊連結: https://doi.org/10.1016/j.cej.2025.167554