樊君偉 Jun Wei Fan
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Education
- Ph.D. in Physics, National Chung Hsing University, Taiwan (2012)
- M.S. in Physics, National Chung Hsing University, Taiwan
- B.S. in Physics, National Changhua University of Education, Taiwan
Publications
- Ming-Ting Wu, Jun-Wei Fan, Kuan-Ting Chen,Shu-Tong Chang, Chung-Yi Lin, "Band Structure and Effective Mass in Monolayer MoS2," Journal of Nanoscience and Nanotechnology (in press).
- Kuan-Ting Chen, Jun-Wei Fan, Shu-Tong Chang, and Chung-Yi Lin, "Subband Structure and Effective Mass in the Inversion Layer of a Strain Si-Based Alloy P-Type MOSFET," Journal of Nanoscience and Nanotechnology 15, p. 2168, 2015.
- Shu-Tong Chang, Jun Wei Fan, Chung-Yi Lin, Ta-Chun Cho, and Ming Huang, "Hole effective masses of p-type metal-oxide-semiconductor inversion layer in strained Si1-xGex alloys channel on (110) and (111) Si substrates," Journal of Applied. Physics 111, p. 033712, February 2012.
- Shih-Jye Sun, Jun Wei Fan, and Chung-Yi Lin, "The electrical conduction variation in stained carbon nanotubes," Physica E 44, p. 803, January 2012.
- Shu-Tong Chang, Shu-Hui Liao, Wei-Ching Wang, Chung-Yi Lin, and Jun- Wei Fan, "Impact of Stress Engineering on Electron Mobility and Ballistic Current for Strained Si NMOSFETs," Journal of the Korean Physical Society 53, p. 1024, March 2008.
- C.Y. Lin, S. T. Chang, Jacky Huang, W.-C. Wang, and J. W. Fan, "Impact of Source/Drain Si1-yCy Stressors on Silicon-on-Insulator NMOSFET," Japanese Journal of Applied Physics 46, p.2107, April 2007.
