Emitter

ZrO/W Thermal Field Emission

Acceleration Voltage

25kV, 50kV, 75kV, 100kV

Electron beam diameter

< 3.0 nm at 50KV

< 2.0 nm at 100KV

Beam shape

Spot beam

Minimum line width

< 10 nm

Beam defection method

Vector scan

Maximum Scanning field

> 2.0mm × 2.0mm

Max. Scanning field at 100kV

> 600μm × 600um

Stitching accuracy

better than 20nm

Overlay accuracy

better than 25nm

Wafer size

2-inch to 6-inch.;  Small sizes of 7mm by 7mm

Mask cassette

2.5-inch to 5-inch

Writing area

> 150 mm × 150 mm

Stage movement range

X-Y

Z

> 150 mm × 150 mm

> ±2.0 mm

Stage position measurement

X-Y

Z

Laser interferometer

Height sensor

Laser Interferometer

λ/1024 (approx. 0.6nm)