SAMCO ICP

• English name：SAMCO RIE-10ip
• 設備規格：
1. RF power supply：

ICP power 0~1000W
BIAS power 0~300W
2. Wafer size: 4 inch
3. Operating pressure：10-5 Pa

• 儀器功用：SiO2 or Si3N4 and dielectric dry etching

Location: B1, Clean room

Manager: Boopathi and Liang-Kun

O2 Plasma Cleaner

• Adjustable RF power (Low / Medium / High) for surface cleaning and activation.
• Introducing gas-- N2, O2
• Vacuum pressure-- 760 Torr - 100 mTorr

Location: 2F, Yellow room

Manager: Liang-Kun & Tzu Tsai

Eyela FDU-2200 Freeze dryer

• Collector Temperature -80 °C
• Ice Holding Capacity 1 L

Location: 2F, Share lab

Manager: Boopathi

Autoleica

Manager: Iris

Location: R215

Olympus ix51

Manager: Iris

Location: R215